The effects of substrates on the structural, morphological, magnetic and electronic properties of V2O5 thin films

IF 2.3 4区材料科学 Q2 MATERIALS SCIENCE, CERAMICS

Journal of Sol-Gel Science and Technology Pub Date : 2025-01-24 DOI:10.1007/s10971-025-06666-z

R. S. Gupta, Sachin Pandey, A. Ghosh, S. K. Sahoo, A. Rahaman, U. K. Goutam, S. Pandey, V. R. Singh

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引用次数: 0

Abstract

This study highlights the influence of various substrates on the structural integrity, phase purity, morphology, composition, magnetic properties, and electronic behavior of V₂O₅ thin films synthesized through chemical solution methods on Si (111), ITO-coated glass, and glass substrates. The amorphous and smooth surfaces of the films were found on glass substrates, while those on ITO-coated glass and Si (111) substrates displayed a polycrystalline nature, with crystallinity increasing from ITO-coated glass to Si. Atomic force microscopy (AFM) confirmed the RMS roughness of the films, and morphology was conducted using high-resolution scanning electron microscopy (HR-SEM) and also energy-dispersive spectroscopy (EDS) mapping for elemental characterization. To know the functional groups present in the samples, Fourier-transform infrared (FT-IR) spectroscopy was employed. The band gap, measured by UV-Vis spectroscopy, ranged from 0.79 ± 0.01 to 0.9 ± 0.01 eV. The bulk magnetization measurements suggest that it exhibits ferromagnetic (FM) behavior with a saturation magnetization of 0.0–0.5 µB/cc. Core-level spectroscopy revealed that vanadium exists in a mixed oxidation state of 5+ and 4+. Findings from XPS, HR-SEM, and UV-Vis measurements confirm oxygen vacancies have a significant role in reducing the band gap and enhancing FM-like behavior in V₂O₅/Si films, which are also influenced by the films’ crystallinity and morphology. These results could pay great attention to the development of spintronic devices.

Graphical Abstract

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本研究强调了不同基底对通过化学溶液法在硅 (111)、ITO 涂层玻璃和玻璃基底上合成的 V2O5 薄膜的结构完整性、相纯度、形貌、成分、磁性能和电子行为的影响。玻璃基底上的薄膜表面无定形且光滑，而 ITO 涂层玻璃和 Si (111) 基底上的薄膜则呈现多晶性质，从 ITO 涂层玻璃到 Si 的结晶度不断增加。原子力显微镜（AFM）证实了薄膜的均方根粗糙度，使用高分辨率扫描电子显微镜（HR-SEM）和能量色散光谱（EDS）绘制元素表征图进行了形貌分析。为了了解样品中存在的官能团，还使用了傅立叶变换红外光谱（FT-IR）。紫外可见光谱法测量的带隙范围为 0.79 ± 0.01 至 0.9 ± 0.01 eV。体磁化测量结果表明，它具有铁磁（FM）特性，饱和磁化率为 0.0-0.5 µB/cc。芯级光谱显示，钒以 5+ 和 4+ 混合氧化态存在。XPS、HR-SEM 和 UV-Vis 测量结果证实，氧空位在减小 V2O5/Si 薄膜带隙和增强类调频行为方面起着重要作用，而这些作用还受到薄膜结晶度和形貌的影响。这些结果对开发自旋电子器件具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Sol-Gel Science and Technology 工程技术-材料科学：硅酸盐

CiteScore

4.70

自引率

4.00%

发文量

280

审稿时长

2.1 months

期刊介绍： The primary objective of the Journal of Sol-Gel Science and Technology (JSST), the official journal of the International Sol-Gel Society, is to provide an international forum for the dissemination of scientific, technological, and general knowledge about materials processed by chemical nanotechnologies known as the "sol-gel" process. The materials of interest include gels, gel-derived glasses, ceramics in form of nano- and micro-powders, bulk, fibres, thin films and coatings as well as more recent materials such as hybrid organic-inorganic materials and composites. Such materials exhibit a wide range of optical, electronic, magnetic, chemical, environmental, and biomedical properties and functionalities. Methods for producing sol-gel-derived materials and the industrial uses of these materials are also of great interest.