Bejoys Jacob, João Azevedo, Jana B Nieder, Bruno Romeira
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引用次数: 0
Abstract
In this Letter, we report the observation of electroluminescence (EL) at ∼866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with a top diameter of 166 nm, arranged in a 10 × 10 pillar array. Hole generation through impact ionization and Zener tunneling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes >300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2% at sub-mA current injection. These results demonstrate the potential for a new, to the best of our knowledge, class of n-type nanoscale light-emitting devices.
期刊介绍:
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