{"title":"A 3D buffer memory for AI and machine learning","authors":"Maarten Rosmeulen","doi":"10.1038/s44287-024-00138-2","DOIUrl":null,"url":null,"abstract":"The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"2 2","pages":"75-76"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00138-2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.
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