Tailoring the Tunneling-Effect-Boosted Interfacial Charge Trapping via Effective Conjugation Length (Adv. Funct. Mater. 7/2025)

Abstract

Interfacial Charge Trapping

The novel perception of a memory transistor based on tunneling-effect-boosted interfacial charge trapping is introduced by Yu-Cheng Chiu and co-workers in article number 2415415. The organic thin film transistor can behave like a memory device under photo-assisted programming/erasing operations, leading to the multimodal functionality of this device for in-memory computing, in-sensor computing, potentially supporting neuromorphic computing, machine learning, and AI development.