Highly efficient warm-white emission and energy transfer mechanism in apatite-like RbSr4(BO3)3: Dy3+,Eu3+ phosphors via heterovalent substitution engineering
IF 2.8 4区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
Based on the advantage of large structural inclusiveness, the apatite-like borate RbSr4(BO3)3:Dy3+,Eu3+ warm-white fluorescent materials have been designed using a heterovalent substitution strategy. In RbSr4(BO3)3:Dy3+,Eu3+, the trivalent dysprosium and europium cations occupy the crystallization sites of divalent strontium cations. The trivalent dysprosium doped RbSr4(BO3)3 exhibits bluish fluorescence with CIE color coordinates of (0.306, 0.347) and correlated color temperature of 6714 K. This is due to the blue emission originating from the 4F9/2 → 6H15/2 electron transition being more intense than the yellow emission derived from the 4F9/2 → 6H13/2 transition. Accordingly, the trivalent europium cations were incorporated into RbSr4(BO3)3:Dy3+ to complement for the insufficient red light. Ultimately, the single-matrix warm-white fluorescent material RbSr4(BO3)3:Dy3+,Eu3+ was successfully synthesized. RbSr4(BO3)3:0.6%Dy3+,0.8%Eu3+ shows CIE color coordinates of (0.395, 0.344), a correlated color temperature of 3340 K, and an enhanced photoluminescence quantum yield (PLQY) of up to approximately 95.9%. This work not only provides a design strategy for novel fluorescent materials, but also endows high-performance single-component warm-white phosphors suitable for solid-state lighting applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.