Enhanced dielectric properties of PFBA@rGO/PVDF-HFP flexible films by non-covalent modification for energy harvesting applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Bingwei Chen, Zhihao Wang, Wangshu Tong, Shengqian Wang, Yanan Li, Yihe Zhang
{"title":"Enhanced dielectric properties of PFBA@rGO/PVDF-HFP flexible films by non-covalent modification for energy harvesting applications","authors":"Bingwei Chen,&nbsp;Zhihao Wang,&nbsp;Wangshu Tong,&nbsp;Shengqian Wang,&nbsp;Yanan Li,&nbsp;Yihe Zhang","doi":"10.1007/s10854-025-14377-y","DOIUrl":null,"url":null,"abstract":"<div><p>Dielectric modulation of triboelectric materials has proven to be a viable approach for enhancing triboelectric nanogenerator (TENG) performance. Nevertheless, the construction of high dielectric composites with optimal interfacial compatibility and exceptional performance is a matter of immediate concern. Graphene oxide (rGO) was modified with pentafluorobenzoic acid (PFBA) to synthesize PFBA@rGO/PVDF-HFP composite films via the casting method. A mass fraction of 5 wt% PFBA@rGO results in a dielectric constant of 211 at a frequency of 40 Hz, which is 15 times greater than that of the pure PVDF-HFP film. Furthermore, the dielectric loss remains low at 0.7. The modification created a stable molecular interface between PVDF-HFP and rGO, improving the compatibility between the rGO filler and PVDF-HFP matrix. This interfacial polarization significantly boosted the composites’ dielectric constant, enabling PFBA@rGO in PVDF-HFP to react flexibly to external electric fields. The TENG with 5 wt% PFBA@rGO/PVDF-HFP achieves a maximum open-circuit voltage of 70 V, which is double that observed for pure PVDF-HFP. This enhancement results from the material’s high dielectric properties, which increase surface charge density. The TENG can light 69 LED bulbs and charge a 3.3 μF capacitor to 5 V in less than a minute. This study provides new insights into the unique potential of the dielectric-modulated output enhancement strategy for TENG in energy harvesting.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14377-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Dielectric modulation of triboelectric materials has proven to be a viable approach for enhancing triboelectric nanogenerator (TENG) performance. Nevertheless, the construction of high dielectric composites with optimal interfacial compatibility and exceptional performance is a matter of immediate concern. Graphene oxide (rGO) was modified with pentafluorobenzoic acid (PFBA) to synthesize PFBA@rGO/PVDF-HFP composite films via the casting method. A mass fraction of 5 wt% PFBA@rGO results in a dielectric constant of 211 at a frequency of 40 Hz, which is 15 times greater than that of the pure PVDF-HFP film. Furthermore, the dielectric loss remains low at 0.7. The modification created a stable molecular interface between PVDF-HFP and rGO, improving the compatibility between the rGO filler and PVDF-HFP matrix. This interfacial polarization significantly boosted the composites’ dielectric constant, enabling PFBA@rGO in PVDF-HFP to react flexibly to external electric fields. The TENG with 5 wt% PFBA@rGO/PVDF-HFP achieves a maximum open-circuit voltage of 70 V, which is double that observed for pure PVDF-HFP. This enhancement results from the material’s high dielectric properties, which increase surface charge density. The TENG can light 69 LED bulbs and charge a 3.3 μF capacitor to 5 V in less than a minute. This study provides new insights into the unique potential of the dielectric-modulated output enhancement strategy for TENG in energy harvesting.

求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信