Zhiliang Wang;Xiang Li;Chen Shen;Xiang Zeng;Peng Guo;Lin Qin;Zhenguo Wang
{"title":"A Switched Flexible Dual-Mode Bandpass Filter Tuned by Organic Electrochemical Transistor","authors":"Zhiliang Wang;Xiang Li;Chen Shen;Xiang Zeng;Peng Guo;Lin Qin;Zhenguo Wang","doi":"10.1109/LMWT.2024.3507753","DOIUrl":null,"url":null,"abstract":"A frequency tunable flexible bandpass filter (BPF) based on electrical tuning of organic electrochemical transistors (OECTs) is designed and fabricated. Microstrip BPF is prepared by screen printing technology. OECTs are integrated on the flexible filter by means of spin coating and pouring. The center frequency of the BPF can be dynamically offset from 3.48 to 3.75 GHz at a bias voltage of 1.2 V. In addition, the consistency of bending and flatness tests demonstrates the high reliability of the proposed method and the application potential in the field of wireless communication and wearable devices.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"197-200"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10787153/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A frequency tunable flexible bandpass filter (BPF) based on electrical tuning of organic electrochemical transistors (OECTs) is designed and fabricated. Microstrip BPF is prepared by screen printing technology. OECTs are integrated on the flexible filter by means of spin coating and pouring. The center frequency of the BPF can be dynamically offset from 3.48 to 3.75 GHz at a bias voltage of 1.2 V. In addition, the consistency of bending and flatness tests demonstrates the high reliability of the proposed method and the application potential in the field of wireless communication and wearable devices.