A 1.7–6.5-GHz 35-W Reactively Matched GaN Power Amplifier Using a Balance-Enhanced Power Distribution Network

0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2024-12-25 DOI:10.1109/LMWT.2024.3501308

Yuhang Zhang;Xiaofan Chen;Wenhua Chen;Zhenghe Feng;Fadhel M. Ghannouchi

引用次数: 0

Abstract

In this letter, a 1.7–6.5-GHz reactively matched power amplifier (RMPA) is designed using a 0.2-

$\mu $

m gallium nitride (GaN) high-electron mobility transistor (HEMT) process. To achieve an output power of more than 30 W, eight transistors are required in the power stage. The coupling effects and the asymmetry of the layout result in a significant imbalance among these transistors, which could deteriorate the performance of the power amplifier (PA). We propose a novel power distribution network (PDN) based on tightly coupled lines to mitigate the imbalance introduced by the compact interstage matching network (ISMN). The fabricated RMPA achieves an output power of 35 W and a PAE of 38%–50% under continuous-wave (CW) test.

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基于平衡增强配电网络的1.7 - 6.5 ghz 35w无功匹配GaN功率放大器

在本文中，采用0.2- $\mu $ m氮化镓（GaN）高电子迁移率晶体管（HEMT）工艺设计了1.7 - 6.5 ghz反应匹配功率放大器（RMPA）。为了达到超过30w的输出功率，功率级需要8个晶体管。由于耦合效应和布局的不对称性，导致这些晶体管之间存在明显的不平衡，从而影响功率放大器的性能。本文提出了一种基于紧密耦合线路的新型配电网络（PDN），以缓解紧凑型级间匹配网络（ISMN）带来的不平衡。在连续波（CW）测试中，制备的RMPA输出功率为35 W， PAE为38%-50%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量