Design and analysis of trigate Ge pocket vertical tunnel FET for enhanced drive current

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-02-14 DOI:10.1016/j.mseb.2025.118096

Khushboo Singh, Ram Awadh Mishra, Kumari Nibha Priyadarshani

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引用次数: 0

Abstract

This paper describes a novel technique that adds triple gate and Ge pocket to vertical TFET in order to increase drive current and suppress ambipolarity in TFET. The proposed structures Trigate VTFET and Trigate Ge Pocket VTFET achieves subthreshold slope of 19.61 mV/dec and 15.62 mV/dec respectively and drive current enhancement of 300 µA/µm obtained in Trigate Ge pocket VTFET. Gate work function and gate dielectric engineering is utilized to optimize device performance also its susceptibility to temperature has been analyzed. Peak transconductance obtained for Trigate Ge Pocket VTFET and Trigate VTFET is 14.88 and 6.89 times higher as compared to its existing vertical TFET alternative. Furthermore, the analog characteristics of the device also enhances having the cut off frequency and GBW increases by 6.44 and 8.82 times for Ge pocket VTFET and 4.45 and 4.18 times for Trigate VTFET. This makes proposed device an appropriate choice for ultralow power, analog/RF applications.

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用于增强驱动电流的三角Ge口袋垂直隧道场效应管的设计与分析

本文介绍了在垂直型TFET中增加三栅极和Ge口袋以增加驱动电流和抑制双极性的新技术。所提出的Trigate VTFET和Trigate Ge Pocket VTFET的亚阈值斜率分别为19.61 mV/dec和15.62 mV/dec，并且在Trigate Ge Pocket VTFET中获得300µA/µm的电流增强。利用栅极功函数和栅极介电工程优化器件性能，并分析了器件的温度敏感性。与现有的垂直型晶体管相比，三角Ge口袋型晶体管和三角晶体管晶体管的峰值跨导率分别高出14.88倍和6.89倍。此外，该器件的模拟特性也得到了增强，Ge口袋型VTFET的截止频率和GBW分别提高了6.44倍和8.82倍，三门型VTFET的截止频率和GBW分别提高了4.45倍和4.18倍。这使得所提出的器件成为超低功耗，模拟/RF应用的合适选择。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.