Characterization and reduction of RF loss up to 110 GHz by optimizing the UID-GaN layer in N-polar GaN material

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-02-12 DOI:10.1063/5.0256418

Yu Qi, Yu Zhou, Qian Li, Sheng Cheng, Xiaoning Zhan, Xinkun Zhang, Qingru Wang, Jianxun Liu, Qian Sun, Hui Yang

引用次数: 0

Abstract

In this work, the mechanism of RF loss up to 110 GHz for N-polar GaN has been studied. With the assistance of S-parameter characterization combined with secondary ion mass spectroscopy analyses, the incorporated oxygen impurity has been identified to be the main source bringing about the severe RF loss of N-polar GaN. The compensation of Fe-doping enables an effective reduction in RF loss. Moreover, the unintentionally doped (UID) GaN layer grown on top of the Fe-doped GaN buffer requires a careful design due to the distinct memory effect of Fe-doping in N-polar GaN. With an optimization of its thickness, a very low RF loss of 0.36 dB/mm at 94 GHz has been attained. Furthermore, by fitting the Fe concentration profile of UID-GaN according to the mass balance rate equation, it is found that the desorption of Fe on the N-polar GaN surface is significant. A bond-based model is introduced to elucidate the difference of the Fe memory effect between Ga-polar and N-polar GaN.

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通过优化n极GaN材料中的id -GaN层来表征和降低高达110 GHz的射频损耗

本文研究了氮极氮化镓高达110 GHz的射频损耗机理。结合s参数表征和二次离子质谱分析，确定了氧杂质是导致n极性氮化镓严重射频损耗的主要来源。铁掺杂的补偿能够有效地降低射频损耗。此外，由于氮极氮化镓中铁掺杂的明显记忆效应，在掺铁氮化镓缓冲层上生长的无意掺杂（UID）氮化镓层需要仔细设计。通过对厚度的优化，实现了94 GHz时0.36 dB/mm的极低射频损耗。此外，根据质量平衡速率方程拟合ud -GaN的Fe浓度曲线，发现n极性GaN表面Fe的解吸作用显著。引入了一个基于键的模型来解释ga极性和n极性氮化镓的铁记忆效应的差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.