Impact of La–Bi co-substitution on the structural, morphological, and dielectric properties of SrFe12O19: a comprehensive study

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ahmad Gholizadeh
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引用次数: 0

Abstract

This research investigates sol–gel auto-combustion synthesized Sr1-xLaxFe12-yBiyO19 (x = 0–0.25, y = 0–0.5) nanoparticles, focusing on La3+ and Bi3+ co-substitution effects on structural and dielectric properties. X-ray diffraction confirms a single-phase M-type hexagonal ferrite structure (space group P63/mmc) with crystallite sizes decreasing from 20 to 13 nm and lattice parameters increasing from 682.08 to 704.73 Å upon La3+ and Bi3+ co-substitution. Field-emission scanning electron microscopy analysis reveals that the La/Bi substitution results in changes to the morphology and particle size of the samples. Dielectric properties analyzed using impedance spectroscopy reveal a decreased real part of dielectric permittivity with increasing frequency and co-substitution, attributable to interfacial polarization and microstructural changes. The imaginary parts of the electrical modulus diagram exhibit a relaxation peak shift towards lower frequencies with co-substitution, indicating enhanced charge carrier mobility and Debye dielectric response. Findings offer comprehensive insights for tailoring properties in energy storage devices, electronic components, and related fields.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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