Interfacial characteristics of seed copper/titanium tungsten alloy/indium tin oxide electrode for silicon heterojunction solar cell under damp heat

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-12 DOI:10.1007/s10854-025-14390-1

Jae-Seong Jeong

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Abstract

This study entailed the fabrication of a layer structure of a grid electrode metallisation for silicon heterojunction (SHJ) solar cell, consisting of a seed layer of Cu/ TiW/ ITO/ a-Si:H. The interfacial characteristics of the barrier of titanium tungsten alloy (TiW) during damp heat aging (85 ºC, 85%rh for 1000 h) was investigated. The barrier stability of the TiW layer was evaluated in two-layer structures: TiW/ indium tin oxide (ITO) and seed Cu/ TiW/ ITO. Furthermore, two TiW layer thicknesses of 20 and 100 nm were considered. The TiW/ ITO structure was stable. However, the seed Cu/ TiW/ ITO structure exhibited various physical and chemical changes owing to the oxidation of the seed Cu layer. A cuprous oxide phase formed on Cu(111) during damp heat aging, which triggered interdiffusion of TiW toward the seed Cu layer. TiW thickness of 100 nm is appropriate for the long-term stability of grid electrode metallisation in SHJ solar cells under damp heat aging.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.