Exploring nonlinear optical properties of single δ-doped quantum wells: influences of position-dependent mass, temperature, and hydrostatic pressure

Abstract

This study investigates the multifaceted impact of position-dependent effective mass, temperature, and hydrostatic pressure on the electronic and optical properties of single-doped quantum wells, with a particular emphasis on varying doping levels. Utilizing effective mass and parabolic band approximations, calculations were meticulously conducted via the diagonalization method, employing a trigonometric orthonormal function basis to elucidate the eigenvalues and eigenfunctions of the confined electron potential. The obtained results unveil substantial alterations in electron energies, state transitions, and absorption spectra consequent to fluctuations in doping levels, temperature, and pressure. These findings provide profound insights into the intricate interplay between semiconductor characteristics and external stimuli, laying a foundation for the optimization of laser and optoelectronic devices through the tailored engineering of material properties. This comprehensive understanding not only advances fundamental knowledge in semiconductor physics but also paves the way for the development of innovative materials with customized optical functionalities, thus driving progress in a wide array of technological applications.