Tensile stress on giant stress-impedance effect of stress-current-annealed FeCoSiBCuNb amorphous ribbons

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-11 DOI:10.1007/s10854-025-14335-8

Yanxing Xing, Shaoxiong Zhou, Bangshao Dong, Qian Zhang, Zheng Chen, Yong Gan

{"title":"Tensile stress on giant stress-impedance effect of stress-current-annealed FeCoSiBCuNb amorphous ribbons","authors":"Yanxing Xing, Shaoxiong Zhou, Bangshao Dong, Qian Zhang, Zheng Chen, Yong Gan","doi":"10.1007/s10854-025-14335-8","DOIUrl":null,"url":null,"abstract":"<div>The stress-impedance (SI) effect of stress-current-annealed FeCoSiBCuNb amorphous thin ribbons was measured in the presence of longitudinal applied tensile stress. Stress value of σ-(△Z/Z)max up to 245 MPa corresponding to peak GSI ratio (△Z/Z)max of 109% at 8 MHz was obtained, which may be the maximum stress value reported in our knowledge. Furthermore, controllable stress values corresponding to the peak GSI ratio were obtained, which is related to the pre-applied tensile stress while annealing. Through the observation of phase structure and magnetic domain structure, it is found that larger value of σ-(△Z/Z)max corresponds to higher transverse component of the magnetic domain. The magnetic anisotropy field due to the residual stress and magnetoelastic energy of the annealed ribbon may be responsible for the variation of σ-(△Z/Z)max. These results have reference value to the potential use of the stress-impedance effect in the design of stress sensors.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14335-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The stress-impedance (SI) effect of stress-current-annealed FeCoSiBCuNb amorphous thin ribbons was measured in the presence of longitudinal applied tensile stress. Stress value of σ-(△Z/Z)_max up to 245 MPa corresponding to peak GSI ratio (△Z/Z)_max of 109% at 8 MHz was obtained, which may be the maximum stress value reported in our knowledge. Furthermore, controllable stress values corresponding to the peak GSI ratio were obtained, which is related to the pre-applied tensile stress while annealing. Through the observation of phase structure and magnetic domain structure, it is found that larger value of σ-(△Z/Z)_max corresponds to higher transverse component of the magnetic domain. The magnetic anisotropy field due to the residual stress and magnetoelastic energy of the annealed ribbon may be responsible for the variation of σ-(△Z/Z)_max. These results have reference value to the potential use of the stress-impedance effect in the design of stress sensors.

Abstract Image

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.