52-GHz Surface Acoustic Wave Resonators in Thin-Film Lithium Niobate on Silicon Carbide

IF 3 2区工程技术 Q1 ACOUSTICS

IEEE transactions on ultrasonics, ferroelectrics, and frequency control Pub Date : 2024-12-30 DOI:10.1109/TUFFC.2024.3522042

Joshua Campbell;Tzu-Hsuan Hsu;Lezli Matto;Naveed Ahmed;Mihir Chaudhari;Ziran Du;Ian Anderson;Jack Kramer;Vakhtang Chulukhadze;Kaicheung Chow;Ming-Huang Li;Mark S. Goorsky;Ruochen Lu

{"title":"52-GHz Surface Acoustic Wave Resonators in Thin-Film Lithium Niobate on Silicon Carbide","authors":"Joshua Campbell;Tzu-Hsuan Hsu;Lezli Matto;Naveed Ahmed;Mihir Chaudhari;Ziran Du;Ian Anderson;Jack Kramer;Vakhtang Chulukhadze;Kaicheung Chow;Ming-Huang Li;Mark S. Goorsky;Ruochen Lu","doi":"10.1109/TUFFC.2024.3522042","DOIUrl":null,"url":null,"abstract":"This article reports a surface acoustic wave (SAW) resonator at 52 GHz with a high quality factor (Q) of 188 and a high phase velocity of 12.2 km/s, marking the first millimeter-wave (mmWave) SAW devices with high Q. Transferred 300-nm 128Y lithium niobate (LN) thin film on 4H silicon carbide (SiC) substrate is used for the acoustic platform. The dramatic frequency scaling is enabled by the high phase velocity thickness-shear mode, confined in the LN-SiC stack, due to the high stiffness and acoustic velocity of SiC. The high phase velocity of 12.2 km/s is approaching the longitudinal wave velocity of 12.5 km/s in 4H SiC. The resonator achieves electromechanical coupling (<inline-formula> <tex-math>${k}^{{2}}$ </tex-math></inline-formula>) of 0.5%, 3-dB series resonance Q (<inline-formula> <tex-math>${Q}_{s}$ </tex-math></inline-formula>) of 12, 3-dB shunt resonance Q (<inline-formula> <tex-math>${Q}_{p}$ </tex-math></inline-formula>) of 188, and maximum Bode Q of 154. Upon further development, the mmWave solidly mounted acoustic platform could enable various applications in signal processing, optomechanical, and quantum applications","PeriodicalId":13322,"journal":{"name":"IEEE transactions on ultrasonics, ferroelectrics, and frequency control","volume":"72 2","pages":"275-282"},"PeriodicalIF":3.0000,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE transactions on ultrasonics, ferroelectrics, and frequency control","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10818637/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ACOUSTICS","Score":null,"Total":0}

引用次数: 0

Abstract

This article reports a surface acoustic wave (SAW) resonator at 52 GHz with a high quality factor (Q) of 188 and a high phase velocity of 12.2 km/s, marking the first millimeter-wave (mmWave) SAW devices with high Q. Transferred 300-nm 128Y lithium niobate (LN) thin film on 4H silicon carbide (SiC) substrate is used for the acoustic platform. The dramatic frequency scaling is enabled by the high phase velocity thickness-shear mode, confined in the LN-SiC stack, due to the high stiffness and acoustic velocity of SiC. The high phase velocity of 12.2 km/s is approaching the longitudinal wave velocity of 12.5 km/s in 4H SiC. The resonator achieves electromechanical coupling (

${k}^{{2}}$

) of 0.5%, 3-dB series resonance Q (

${Q}_{s}$

) of 12, 3-dB shunt resonance Q (

${Q}_{p}$

) of 188, and maximum Bode Q of 154. Upon further development, the mmWave solidly mounted acoustic platform could enable various applications in signal processing, optomechanical, and quantum applications

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE transactions on ultrasonics, ferroelectrics, and frequency control 工程技术-工程：电子与电气

CiteScore

7.70

自引率

16.70%

发文量

583

审稿时长

4.5 months

期刊介绍： IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control includes the theory, technology, materials, and applications relating to: (1) the generation, transmission, and detection of ultrasonic waves and related phenomena; (2) medical ultrasound, including hyperthermia, bioeffects, tissue characterization and imaging; (3) ferroelectric, piezoelectric, and piezomagnetic materials, including crystals, polycrystalline solids, films, polymers, and composites; (4) frequency control, timing and time distribution, including crystal oscillators and other means of classical frequency control, and atomic, molecular and laser frequency control standards. Areas of interest range from fundamental studies to the design and/or applications of devices and systems.