Competing Ferroelectric Polarization and Defect Migration Induced Resistive Switching in β′-In2Se3

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-02-10 DOI:10.1021/acs.nanolett.4c06314

Yinfeng Long, Saiyu Bu, Han Chen, Kai Liu, Xin Zhou, Shiyu Zhang, Xiaotian Zhang, Teng Zhang, Changxin Chen, Wugang Liao, Kian Ping Loh, Lin Wang

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Abstract

Layered β′-In₂Se₃ has garnered significant attention due to its intriguing multiferroic properties. Until now, most studies have focused on a material-level understanding, with limited exploration of device-level properties. This work systematically investigates the in-plane resistive switching behavior of β′-In₂Se₃. Besides resistive switching resulting from ferroelectric polarization reversal, the critical role of defect migration is unveiled in determining the overall electrical characteristics of β′-In₂Se₃ devices. Specifically, we elucidate the contribution of electric-field-induced Se vacancy migration to resistive switching through time-dependent current evolution, in situ electric force microscopy, and density functional theory calculations. By considering the interplay between free carriers, bound charges, and mobile defects, a comprehensive physical picture of the complex resistive switching behavior of β′-In₂Se₃ devices is established. This work provides crucial insights into understanding and manipulating the resistive switching behavior of 2D vdW ferroelectric devices.

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β ' -In2Se3中竞争性铁电极化和缺陷迁移诱导的电阻开关

层状β ' -In2Se3由于其有趣的多铁性质而引起了极大的关注。到目前为止，大多数研究都集中在材料级的理解上，对设备级属性的探索有限。本工作系统地研究了β′-In2Se3的面内电阻开关行为。除了铁电极化反转导致的电阻开关外，揭示了缺陷迁移在决定β ' -In2Se3器件整体电特性中的关键作用。具体来说，我们通过随时间的电流演化、原位电力显微镜和密度泛函理论计算来阐明电场诱导的硒空位迁移对电阻开关的贡献。通过考虑自由载流子、束缚电荷和移动缺陷之间的相互作用，建立了β′-In2Se3器件复杂电阻开关行为的全面物理图景。这项工作为理解和操纵二维vdW铁电器件的电阻开关行为提供了至关重要的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.