Qingyuan Chang, Bin Hou, Ling Yang, Mao Jia, Youjun Zhu, Mei Wu, Meng Zhang, Qing Zhu, Hao Lu, Jiarui Xu, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xu Zou, Haolun Sun, Xiaohua Ma, Yue Hao
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引用次数: 0
Abstract
In this work, we present the fabrication of a fully vertical β-Ga2O3 Schottky barrier diode with junction termination extension (JTE-SBD) utilizing a p-GaN layer produced by sputtering, offering a solution to the absence of p-Ga2O3 materials. The p-GaN/n-Ga2O3 JTE-SBD demonstrates a turn-on voltage (Von) of 0.8 V, a specific on-resistance (Ron,sp) of 6.15 mΩ·cm2, an ideality factor (n) of 1.24, a breakdown voltage of 3 kV, and a Baliga's Figure of Merit of 1.46 GW/cm2. The current–voltage–temperature (I–V–T) testing has confirmed a transition in the dominant leakage mechanisms from the Poole–Frenkel mechanism to variable-range hopping.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
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