Electronic transport and photoelectric properties of \(\textrm{WTe}_2\)-\(\textrm{MoTe}_2\) heterostructure transistor

Abstract

This paper presents a detailed study of the electronic transport and photoelectric properties of a \(WTe_2-MoTe_2\) heterostructure phototransistor, designed to enhance performance in ultraviolet and infrared photodetection applications. Using density functional theory and non-equilibrium Green’s function methods, we simulate the device’s behavior under different gate voltages and light polarizations to assess its effectiveness in spectral response and charge transport. The \(WTe_2-MoTe_2\) p-n junction demonstrates a favorable type-II band alignment, enabling efficient separation of photogenerated carriers. The results reveal that the device achieves a high rectification ratio of \(10^5\), a photoresponsivity of 67.6 mA/W, an external quantum efficiency of \(31.12\%\), and a detectivity of \(2.7\times 10^{10}\) Jones, positioning it as a strong competitor among similar phototransistors. The phototransistor shows peak photoresponsivity under Z-polarized light in the infrared and violet regions (1.05 eV and 3.2 eV) and exhibits heightened sensitivity in the ultraviolet range (4.6 eV) under Y-polarized light. The application of gate voltages further enhances ultraviolet detection, underscoring the tunable nature of the device’s photoelectric response. These results identify the \(WTe_2-MoTe_2\) heterostructure as a promising candidate for high-sensitivity, broadband photodetection, demonstrating its versatility across various spectral ranges for advanced optoelectronic systems requiring selective sensitivity and efficient light detection.