Design and Fabrication of Highly Performance EGFET and Application in Thrombin Detection

IF 4.3 2区综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Journal Pub Date : 2024-12-16 DOI:10.1109/JSEN.2024.3514187

Minghui Zhang;Jidong Jiang;Wei Zhang;Ting Wang;Xinglong Zhu;Song Ding;Tao Liu;Yiqing Wang

{"title":"Design and Fabrication of Highly Performance EGFET and Application in Thrombin Detection","authors":"Minghui Zhang;Jidong Jiang;Wei Zhang;Ting Wang;Xinglong Zhu;Song Ding;Tao Liu;Yiqing Wang","doi":"10.1109/JSEN.2024.3514187","DOIUrl":null,"url":null,"abstract":"In this article, a high-performance extended-gate field-effect transistor (EGFET) with a replaceable sensing area was designed using HfO2 and In2O3. A 3-D simulation model was built based on Silvaco technology computer aided design (TCAD) software. This model could capture the internal physical structure of the device accurately, to guide the design of EGFETs. Based on the material and structure simulation analysis, the optimal simulation model was constructed. Then, the EGFET was fabricated in accordance with this model. The results demonstrated that the EGFET designed in this study exhibited high performance with pH voltage sensitivity of 110.91 mV/pH, linearity (<inline-formula> <tex-math>${R}^{2}$ </tex-math></inline-formula>) of 97.67%, and relative standard deviation (RSD) of threshold voltage of 3.51%. Furthermore, thrombin (Tob), which requires high detection accuracy and a wide concentration range, was chosen as the detecting target biomarker to validate the performance of EGFETs in detecting trace markers. A handheld device was fabricated based on the EGFET to realize the detection of Tob concentration in the range of 1–10 000 pM (<inline-formula> <tex-math>${R}^{2}$ </tex-math></inline-formula> =95.64%), indicating the excellent performance and enormous potential of the EGFET.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 3","pages":"4151-4156"},"PeriodicalIF":4.3000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Journal","FirstCategoryId":"103","ListUrlMain":"https://ieeexplore.ieee.org/document/10804089/","RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this article, a high-performance extended-gate field-effect transistor (EGFET) with a replaceable sensing area was designed using HfO2 and In2O3. A 3-D simulation model was built based on Silvaco technology computer aided design (TCAD) software. This model could capture the internal physical structure of the device accurately, to guide the design of EGFETs. Based on the material and structure simulation analysis, the optimal simulation model was constructed. Then, the EGFET was fabricated in accordance with this model. The results demonstrated that the EGFET designed in this study exhibited high performance with pH voltage sensitivity of 110.91 mV/pH, linearity (

${R}^{2}$

) of 97.67%, and relative standard deviation (RSD) of threshold voltage of 3.51%. Furthermore, thrombin (Tob), which requires high detection accuracy and a wide concentration range, was chosen as the detecting target biomarker to validate the performance of EGFETs in detecting trace markers. A handheld device was fabricated based on the EGFET to realize the detection of Tob concentration in the range of 1–10 000 pM (

${R}^{2}$

=95.64%), indicating the excellent performance and enormous potential of the EGFET.

查看原文本刊更多论文

高效EGFET的设计与制造及其在凝血酶检测中的应用

本文以HfO2和In2O3为材料，设计了一种具有可更换传感区域的高性能扩展栅场效应晶体管（EGFET）。基于Silvaco technology计算机辅助设计（TCAD）软件建立了三维仿真模型。该模型可以准确地捕捉器件内部物理结构，指导egfet的设计。在材料和结构仿真分析的基础上，建立了最优仿真模型。然后，根据该模型制备了EGFET。结果表明，EGFET具有良好的性能，pH电压灵敏度为110.91 mV/pH，线性度（${R}^{2}$）为97.67%，阈值电压相对标准偏差（RSD）为3.51%。此外，选择检测精度高、浓度范围广的凝血酶（Tob）作为检测目标生物标志物，验证了egfet检测痕量标志物的性能。利用EGFET制作了手持装置，实现了1 ~ 10 000 pM范围内Tob浓度的检测（${R}^{2}$ =95.64%），显示了EGFET的优异性能和巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Sensors Journal 工程技术-工程：电子与电气

CiteScore

7.70

自引率

14.00%

发文量

2058

审稿时长

5.2 months

期刊介绍： The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice