Effects of surface ultraviolet/ozone treatment on the electrical characteristics of Pt/Ga2O3/SiC Schottky diodes

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2025-02-07 DOI:10.1007/s00339-024-08198-9

Se-Rim Park, Tae-Hee Lee, Ji-Soo Choi, Hyun-Woo Lee, Seung-Hwan Chung, Min-Yeong Kim, Geon-Hee Lee, Michael A. Schweitz, Sang-Mo Koo

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Abstract

This study investigates the effects of ultraviolet/ozone (UV/O₃) treatment on the electrical and morphological characteristics of Pt/Ga₂O₃ diodes. Surface treatment is crucial in gallium oxide (Ga₂O₃)-based devices due to its ability to reduce surface defects and improve interface quality, significantly enhancing device performance. Electrical characterization was performed using capacitance–voltage (C–V), current–voltage (I–V), breakdown voltage (BV), and temperature-dependent current–voltage (I–V–T) measurements. Surface analysis was performed via X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The UV/O₃-treated diodes exhibited improved performance, with the on/off ratio increasing from 5.60 × 10³ to 2.49 × 10⁴ and reduced reverse leakage current. Additionally, the treatment reduced Schottky barrier inhomogeneity, indicating a more uniform metal/semiconductor interface. These improvements are attributed to the reduction of oxygen vacancy defects and enhanced surface morphology, as confirmed by XPS and AFM. The results suggest that UV/O₃ treatment effectively enhances the performance of Ga₂O₃-based diodes by controlling interface properties.

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.