Giant Effective g Factor and Low Effective Mass in \(Pb_{1-x}Sn_{x}Te\): Effect of Strong Spin-Orbit Interaction and Band Inversion

IF 1.1 3区 物理与天体物理 Q4 PHYSICS, APPLIED
Himanshu S. Gouda, Sashi S. Behera, Rajiba L. Hota
{"title":"Giant Effective g Factor and Low Effective Mass in \\(Pb_{1-x}Sn_{x}Te\\): Effect of Strong Spin-Orbit Interaction and Band Inversion","authors":"Himanshu S. Gouda,&nbsp;Sashi S. Behera,&nbsp;Rajiba L. Hota","doi":"10.1007/s10909-024-03258-z","DOIUrl":null,"url":null,"abstract":"<div><p>The IV-VI compound semiconductors comprising binary and ternary tellurides exhibit an elevated effective g factor <span>\\((g_\\textrm{eff})\\)</span> and reduced effective mass <span>\\((m^{*})\\)</span> as a consequence of potent spin-orbit (s.o) interaction. In the ternary compound with magnetic impurity, the observations of high <span>\\(g_\\textrm{eff}\\)</span> and corresponding low <span>\\(m^{*}\\)</span> are not only attributed to s.o interaction, but also s/p-d/f hybridization. However, as compared to the exchange interaction, the s.o interaction is the strongest and most dominating in these diluted magnetic semiconductors. The strength of the s.o coupling is manifested by the presence of an elevated <span>\\(g_\\textrm{eff}\\)</span> and low <span>\\(m^{*}\\)</span> in the system. In this correspondence, we measure these parameters in <span>\\(Pb_{1-x}Sn_{x}Te\\)</span>, with <i>Sn</i> as the non-magnetic impurity for different carriers at fixed temperature; T = 1.5K. Here, we formulate an effective equation within the framework of multi-band <span>\\(\\vec {k}\\cdot \\vec {\\pi }\\)</span> theory, incorporating the effect of s.o interaction and a magnetic field. We derive expressions for the <span>\\(g_\\textrm{eff}\\)</span> and <span>\\(m^{*}\\)</span> through Green’s function expansion method by considering the above interactions with <i>Sn</i> impurity and assuming the band inversion model relevant to the <span>\\(Pb_{1-x}Sn_{x}Te\\)</span> system. Finally, we extensively examine these parameters and their respective anisotropies in <span>\\(Pb_{1-x}Sn_{x}Te\\)</span> as functions of carrier concentration and impurity levels at <span>\\(T=1.5 K\\)</span>.We introduce a remarkably high effective g factor, specifically <span>\\(g_\\textrm{eff}=4280\\)</span>, for n<span>\\(-Pb_{1-x}Sn_{x}Te\\)</span> and <span>\\(g_\\textrm{eff}=3680\\)</span>, for p<span>\\(-Pb_{1-x}Sn_{x}Te\\)</span>. These values exhibit significant anisotropies, accompanied by correspondingly low effective masses, with <span>\\(m_{c}^{*}=0.0023m_{0}\\)</span> and <span>\\(m_{v}^{*}=0.0024m_{0}\\)</span> at <span>\\(x=0.36\\)</span> within the concentration range of <span>\\(10^{17}\\)</span> to <span>\\(10^{18} {\\text{cm}}^{{ - 3}}\\)</span>. The existence of high <span>\\(g_\\textrm{eff}\\)</span> and low <span>\\(m^{*}\\)</span> in strongly s.o interacting systems like <i>PbTe</i>, and its alloy <span>\\(Pb_{1-x}Sn_{x}Te\\)</span> qualify them to be used in spin-orbit physics apart from the field of thermoelectronics.</p></div>","PeriodicalId":641,"journal":{"name":"Journal of Low Temperature Physics","volume":"218 3-4","pages":"284 - 304"},"PeriodicalIF":1.1000,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Low Temperature Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s10909-024-03258-z","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

The IV-VI compound semiconductors comprising binary and ternary tellurides exhibit an elevated effective g factor \((g_\textrm{eff})\) and reduced effective mass \((m^{*})\) as a consequence of potent spin-orbit (s.o) interaction. In the ternary compound with magnetic impurity, the observations of high \(g_\textrm{eff}\) and corresponding low \(m^{*}\) are not only attributed to s.o interaction, but also s/p-d/f hybridization. However, as compared to the exchange interaction, the s.o interaction is the strongest and most dominating in these diluted magnetic semiconductors. The strength of the s.o coupling is manifested by the presence of an elevated \(g_\textrm{eff}\) and low \(m^{*}\) in the system. In this correspondence, we measure these parameters in \(Pb_{1-x}Sn_{x}Te\), with Sn as the non-magnetic impurity for different carriers at fixed temperature; T = 1.5K. Here, we formulate an effective equation within the framework of multi-band \(\vec {k}\cdot \vec {\pi }\) theory, incorporating the effect of s.o interaction and a magnetic field. We derive expressions for the \(g_\textrm{eff}\) and \(m^{*}\) through Green’s function expansion method by considering the above interactions with Sn impurity and assuming the band inversion model relevant to the \(Pb_{1-x}Sn_{x}Te\) system. Finally, we extensively examine these parameters and their respective anisotropies in \(Pb_{1-x}Sn_{x}Te\) as functions of carrier concentration and impurity levels at \(T=1.5 K\).We introduce a remarkably high effective g factor, specifically \(g_\textrm{eff}=4280\), for n\(-Pb_{1-x}Sn_{x}Te\) and \(g_\textrm{eff}=3680\), for p\(-Pb_{1-x}Sn_{x}Te\). These values exhibit significant anisotropies, accompanied by correspondingly low effective masses, with \(m_{c}^{*}=0.0023m_{0}\) and \(m_{v}^{*}=0.0024m_{0}\) at \(x=0.36\) within the concentration range of \(10^{17}\) to \(10^{18} {\text{cm}}^{{ - 3}}\). The existence of high \(g_\textrm{eff}\) and low \(m^{*}\) in strongly s.o interacting systems like PbTe, and its alloy \(Pb_{1-x}Sn_{x}Te\) qualify them to be used in spin-orbit physics apart from the field of thermoelectronics.

(Pb_{1-x}Sn_{x}Te/)中的巨大有效 g 因子和低有效质量:强自旋轨道相互作用和带反转的影响
由二元和三元碲化物组成的IV-VI化合物半导体表现出有效g因子\((g_\textrm{eff})\)升高和有效质量\((m^{*})\)降低,这是自旋轨道(s.o)相互作用的结果。在含磁性杂质的三元化合物中,观察到的高\(g_\textrm{eff}\)和相应的低\(m^{*}\)不仅归因于s.o相互作用,还归因于s/p-d/f杂化。然而,与交换相互作用相比,在这些稀释磁性半导体中,s.o相互作用是最强的,也是最主要的。s.o耦合的强度表现为系统中存在一个升高的\(g_\textrm{eff}\)和一个低的\(m^{*}\)。在此通信中,我们在\(Pb_{1-x}Sn_{x}Te\)中测量了这些参数,在固定温度下,Sn作为不同载流子的非磁性杂质;T = 1.5k。在此,我们在多波段\(\vec {k}\cdot \vec {\pi }\)理论框架下建立了一个有效的方程,考虑了s.o相互作用和磁场的影响。考虑上述与锡杂质的相互作用,并假设\(Pb_{1-x}Sn_{x}Te\)系统的能带反演模型,通过格林函数展开法推导出\(g_\textrm{eff}\)和\(m^{*}\)的表达式。最后,我们广泛地研究了\(Pb_{1-x}Sn_{x}Te\)中这些参数及其各自的各向异性作为\(T=1.5 K\)中载流子浓度和杂质水平的函数。我们引入了一个非常高的有效g因子,特别是\(g_\textrm{eff}=4280\),对于n \(-Pb_{1-x}Sn_{x}Te\)和\(g_\textrm{eff}=3680\),对于p \(-Pb_{1-x}Sn_{x}Te\)。这些值具有显著的各向异性,有效质量相对较低,\(x=0.36\)处的\(m_{c}^{*}=0.0023m_{0}\)和\(m_{v}^{*}=0.0024m_{0}\)在\(10^{17}\) ~ \(10^{18} {\text{cm}}^{{ - 3}}\)的浓度范围内。在像PbTe及其合金\(Pb_{1-x}Sn_{x}Te\)这样的强s.o相互作用体系中,高\(g_\textrm{eff}\)和低\(m^{*}\)的存在使得它们除了用于热电子学领域外,还可以用于自旋轨道物理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Low Temperature Physics
Journal of Low Temperature Physics 物理-物理:凝聚态物理
CiteScore
3.30
自引率
25.00%
发文量
245
审稿时长
1 months
期刊介绍: The Journal of Low Temperature Physics publishes original papers and review articles on all areas of low temperature physics and cryogenics, including theoretical and experimental contributions. Subject areas include: Quantum solids, liquids and gases; Superfluidity; Superconductivity; Condensed matter physics; Experimental techniques; The Journal encourages the submission of Rapid Communications and Special Issues.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信