{"title":"Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF","authors":"Ashish Raman, Rohit Sachdeva, Prateek Kumar, Prabhat Singh","doi":"10.1007/s12633-024-03197-0","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, SiGe composite/Ge/Si heterostructure-based junctionless nanowire transistor is investigated. To minimise the lattice mismatch, the composition of Ge is kept at 0.45. Various heterostructures examined are Si<sub>1-x</sub>Ge<sub>X</sub>GeSi, GeSi<sub>1-x</sub>Ge<sub>X</sub>Si, Si<sub>1-x</sub>Ge<sub>X</sub>SiGe, and GeSiSi<sub>1-X</sub>Ge<sub>X</sub>. For simulation, the Schrodinger–Poisson equation is used to form a Hamiltonian matrix, and to enhance the accuracy of the results, non-equilibrium Green’s function is used to calculate the transport parameters. Different characteristics examined are band energy, transmission probability, and density of states at the source and drain electrodes. The findings demonstrate that the Ge-Si–Si<sub>0.45</sub>Ge<sub>0.55</sub> configuration exhibits the best I<sub>DS</sub> -V<sub>GS</sub> Characteristics with high I<sub>ON</sub>/I<sub>OFF</sub> ratio and steep subthreshold swing, indicating its potential for future low-power electronic applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"259 - 266"},"PeriodicalIF":2.8000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03197-0","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, SiGe composite/Ge/Si heterostructure-based junctionless nanowire transistor is investigated. To minimise the lattice mismatch, the composition of Ge is kept at 0.45. Various heterostructures examined are Si1-xGeXGeSi, GeSi1-xGeXSi, Si1-xGeXSiGe, and GeSiSi1-XGeX. For simulation, the Schrodinger–Poisson equation is used to form a Hamiltonian matrix, and to enhance the accuracy of the results, non-equilibrium Green’s function is used to calculate the transport parameters. Different characteristics examined are band energy, transmission probability, and density of states at the source and drain electrodes. The findings demonstrate that the Ge-Si–Si0.45Ge0.55 configuration exhibits the best IDS -VGS Characteristics with high ION/IOFF ratio and steep subthreshold swing, indicating its potential for future low-power electronic applications.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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