Zixia Yu, Xiaolong Zhao, Yongqing Yue, Danyang Huang, Yongning He
{"title":"Photoconductive and acoustic dual-mode X-ray dose rate detector based on a GaN single crystal","authors":"Zixia Yu, Xiaolong Zhao, Yongqing Yue, Danyang Huang, Yongning He","doi":"10.1016/j.sna.2025.116283","DOIUrl":null,"url":null,"abstract":"<div><div>A photoconductive and acoustic dual-mode X-ray dose rate detector based on a GaN single crystal was explored in this work, which utilizing the photoelectric and piezoelectric effects of the GaN semiconductor. The detector was fabricated from a bulk GaN single crystal with a resistivity of 10<sup>7</sup>·Ω·cm, and its resonant frequency in the dark condition is 11.5 MHz, with a high quality factor (Q factor) of 1165. Under X-ray irradiation, the bulk conductivity of the GaN single crystal increases allowing the detector to work at the photoconductive mode. Simultaneously, the reduced wave velocity causes a shift in the resonant frequency of the GaN acoustic resonator enabling working at the acoustic mode. Experimental results show that the detector has the responsivities of nC Gy<sup>−1</sup>·cm<sup>-</sup>² and (0.31 ± 0.03) kHz Gy⁻¹ s for the photoconductive and the acoustic modes respectively.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"384 ","pages":"Article 116283"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725000895","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A photoconductive and acoustic dual-mode X-ray dose rate detector based on a GaN single crystal was explored in this work, which utilizing the photoelectric and piezoelectric effects of the GaN semiconductor. The detector was fabricated from a bulk GaN single crystal with a resistivity of 107·Ω·cm, and its resonant frequency in the dark condition is 11.5 MHz, with a high quality factor (Q factor) of 1165. Under X-ray irradiation, the bulk conductivity of the GaN single crystal increases allowing the detector to work at the photoconductive mode. Simultaneously, the reduced wave velocity causes a shift in the resonant frequency of the GaN acoustic resonator enabling working at the acoustic mode. Experimental results show that the detector has the responsivities of nC Gy−1·cm-² and (0.31 ± 0.03) kHz Gy⁻¹ s for the photoconductive and the acoustic modes respectively.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...