Effect of bismuth oxide on the gamma-ray shielding properties of phosphate glass P2O5-Bi2O3-Na2SO4-ZnO in the energy range (0.1–3 MeV)

IF 1.4 4区 化学 Q4 CHEMISTRY, INORGANIC & NUCLEAR
Emhemmad Jumha Emhemmad , Abdelkhader Ali Abobaker Omar , Wesam Ahmed Mohamed Zeyara , Tarek Mohamed Fayez Ahmed , Sameh Ahmed Said Negem , Moustfa Mohamed Hassan Eshtewi
{"title":"Effect of bismuth oxide on the gamma-ray shielding properties of phosphate glass P2O5-Bi2O3-Na2SO4-ZnO in the energy range (0.1–3 MeV)","authors":"Emhemmad Jumha Emhemmad ,&nbsp;Abdelkhader Ali Abobaker Omar ,&nbsp;Wesam Ahmed Mohamed Zeyara ,&nbsp;Tarek Mohamed Fayez Ahmed ,&nbsp;Sameh Ahmed Said Negem ,&nbsp;Moustfa Mohamed Hassan Eshtewi","doi":"10.1080/10426507.2025.2452579","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the gamma radiation attenuation parameters were calculated using Phy-X/PSD for a prepared quaternary system of phosphate glass (95-x)P<sub>2</sub>O<sub>5</sub>-xBi<sub>2</sub>O<sub>3</sub>-3Na<sub>2</sub>SO<sub>4</sub>-2ZnO, where (<em>x</em> = 30, 40, and 50 mol%). In addition, the attenuation interactions were calculated using the X-Com program, as all these calculations were done in the range of energies (0.1–3 MeV). The results showed that the S3 sample had the highest value of the mass attenuation coefficient up to the energy value of 0.8261 MeV, after which the values of the three investigated samples were approximately equal. The S3 sample also has the lowest value for a half value layer during the measured range of energy. The results also showed that the photoelectric effect interaction is the largest contributor to the attenuation process at the first three energies (0.1, 0.15, and 0.2 MeV), and at energy values ​​with 0.3–3 MeV, the Compton effect becomes the largest contributor to the attenuation process. The contribution of the pair production effect interaction begins to appear at the energy 1.025 MeV, and its contribution to the gamma ray attenuation process increases gradually in association with the Compton effect interaction until the value of 3 MeV.</div></div>","PeriodicalId":20056,"journal":{"name":"Phosphorus, Sulfur, and Silicon and the Related Elements","volume":"200 1","pages":"Pages 101-107"},"PeriodicalIF":1.4000,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Phosphorus, Sulfur, and Silicon and the Related Elements","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/org/science/article/pii/S1042650725000024","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
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Abstract

In this paper, the gamma radiation attenuation parameters were calculated using Phy-X/PSD for a prepared quaternary system of phosphate glass (95-x)P2O5-xBi2O3-3Na2SO4-2ZnO, where (x = 30, 40, and 50 mol%). In addition, the attenuation interactions were calculated using the X-Com program, as all these calculations were done in the range of energies (0.1–3 MeV). The results showed that the S3 sample had the highest value of the mass attenuation coefficient up to the energy value of 0.8261 MeV, after which the values of the three investigated samples were approximately equal. The S3 sample also has the lowest value for a half value layer during the measured range of energy. The results also showed that the photoelectric effect interaction is the largest contributor to the attenuation process at the first three energies (0.1, 0.15, and 0.2 MeV), and at energy values ​​with 0.3–3 MeV, the Compton effect becomes the largest contributor to the attenuation process. The contribution of the pair production effect interaction begins to appear at the energy 1.025 MeV, and its contribution to the gamma ray attenuation process increases gradually in association with the Compton effect interaction until the value of 3 MeV.
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来源期刊
CiteScore
2.60
自引率
7.70%
发文量
103
审稿时长
2.1 months
期刊介绍: Phosphorus, Sulfur, and Silicon and the Related Elements is a monthly publication intended to disseminate current trends and novel methods to those working in the broad and interdisciplinary field of heteroatom chemistry.
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