A 75.12-nW 0.5-V MOS-based BGR comprising a curvature compensation circuit for analog-to-digital converter applications

Abstract

This research presents a low-power metal–oxide–semiconductor field effect transistor (MOSFET)-based bandgap reference (BGR) circuit that operates without bipolar transistors, aiming to minimize the required supply voltage and active area for low-voltage applications. All MOSFETs within the proposed bandgap reference circuit function in the subthreshold region, effectively reducing power consumption. Additionally, a curvature compensation technique is presented to enhance the temperature coefficient and extend the operational temperature range. The proposed BGR circuit, simulated using a 65-nm complementary metal oxide semiconductor (CMOS) process, demonstrates a simulated reference voltage of 0.223 V and temperature coefficient (TC) of 18.16 ppm/°C for the reference output across a wide temperature range of −60 °C to 160 °C. Furthermore, the circuit occupies a compact silicon area of 0.0028 mm². and consumes a power of 75.12 nW at 25 °C. The proposed bandgap reference circuit is well-suited for providing reference voltages in various integrated circuits, particularly in high-precision low-voltage analog-to-digital converters.