Multiple threshold displacement energy in Non-Ionizing Energy Loss calculations for compound semiconductors

Abstract

The traditional approach to evaluate the Displacement Damage Dose (DDD) effects in irradiated materials hinges on the concept of Non-Ionizing Energy Loss (NIEL). Historically, this method uses a single atomic displacement threshold energy (E_d) as a benchmark. But a single E_d just doesn’t cut it when it comes to accurately capturing the damage caused by electrons. To tackle this shortcoming, a more refined technique has been devised—one that introduces a spectrum of threshold energies into the NIEL calculations. Initially crafted for monatomic materials, this method has now been tailored for compound materials. Here, we propose updated NIEL values for certain III-V semiconductors and compare them with experimental damage factors, particularly emphasizing the effects of electron interactions.