Simulation of bent Laue crystals for a high-energy X-ray monochromator with heat load consideration

IF 5.2 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Jiayi Wang, Lidan Gao, Ming Li, Yiming Yang, Yanchun Li, Hu Cheng, Longlong Fan, Youkang Wang, Huilong Guo, Quanjie Jia
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引用次数: 0

Abstract

The performance of a double-crystal Laue-case monochromator has been evaluated for the Engineering Material beamline at the High Energy Photon Source. Expanding on the xrt framework, the crystal simulation incorporates the Penning–Polder and multilamellar models to determine the crystal diffraction profiles and utilizes two approaches, analytical expression and discrete point, for crystal depiction. The simulation accounts for the heat load by treating it as both face distortion and bulk distortion. Three scenarios are discussed: an ideally bent crystal without heat load, a bent crystal with thermally induced face distortion and a bent crystal with thermally induced bulk distortion. The mutual consistency in tracing confirms the validity of the crystal simulation. Two thermal distortion assessment tools are available: one for the rapid evaluation of the impact of significant distortions, and the other for the refined reflection of interior lattice plane distortions, which constitutes a key innovation of the simulation. The tracing outcomes offer valuable guidance for decision making and risk mitigation in the optical design process.

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来源期刊
Journal of Applied Crystallography
Journal of Applied Crystallography CHEMISTRY, MULTIDISCIPLINARYCRYSTALLOGRAPH-CRYSTALLOGRAPHY
CiteScore
7.80
自引率
3.30%
发文量
178
期刊介绍: Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.
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