Exploring the Limits and Balancing Efficiency, Transparency, and Esthetics in Ultrathin a-Si:H Transparent Photovoltaic Devices

IF 6 3区 工程技术 Q2 ENERGY & FUELS
Solar RRL Pub Date : 2025-01-08 DOI:10.1002/solr.202400816
Gustavo Alvarez-Suarez, Alex J. Lopez-Garcia, Pau Estarlich, Jose Miguel Asensi, Gerard Masmitjà, Pablo Ortega, Cristobal Voz, Joaquim Puigdollers, Alejandro Pérez Rodríguez
{"title":"Exploring the Limits and Balancing Efficiency, Transparency, and Esthetics in Ultrathin a-Si:H Transparent Photovoltaic Devices","authors":"Gustavo Alvarez-Suarez,&nbsp;Alex J. Lopez-Garcia,&nbsp;Pau Estarlich,&nbsp;Jose Miguel Asensi,&nbsp;Gerard Masmitjà,&nbsp;Pablo Ortega,&nbsp;Cristobal Voz,&nbsp;Joaquim Puigdollers,&nbsp;Alejandro Pérez Rodríguez","doi":"10.1002/solr.202400816","DOIUrl":null,"url":null,"abstract":"<p>\nTransparent photovoltaic (TPV) devices represent a promising advance in photovoltaic technologies, particularly in building-integrated photovoltaics (BIPV). Unlike conventional photovoltaics, which primarily prioritize efficiency, TPV must balance between efficiency, transparency, and aesthetics. These additional dimensions introduce unique challenges on device architecture. This article reports the development of wide-bandgap, inorganic-based TPV devices integrating ultrathin hydrogenated amorphous silicon (a-Si:H) as a transparent absorber, with carrier selective contacts and transparent electrodes. The article analyzes how absorber thickness influences the electrical, optical, and aesthetic performance of devices, evaluating key parameters in TPV such as light utilization efficiency (LUE), average photopic transmittance (APT), color rendering index (CRI), and electrical properties such as power conversion efficiency (PCE). The device structure is SLG/FTO/AZO/a-SiC<sub><i>x</i></sub>(<i>n</i>)/a-Si:H/V<sub>2</sub>O<sub><i>x</i></sub>/AZO. This approach results in PCE ranging from 1.7% with an APT of 60% to a PCE of 4.1% with an APT of 28%, yielding LUE values between 0.9% and 1.3%. Device characterization encompasses optical spectrophotometry, J–V measurements under standard test conditions, spectral response analysis, and variable illumination measurements (VIM). Additionally, color characterization is conducted using CIE 1931 color space maps to determine the chromaticity coordinates, CRI, and the variation of color as a function of absorber thickness.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0000,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400816","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar RRL","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/solr.202400816","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
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Abstract

Transparent photovoltaic (TPV) devices represent a promising advance in photovoltaic technologies, particularly in building-integrated photovoltaics (BIPV). Unlike conventional photovoltaics, which primarily prioritize efficiency, TPV must balance between efficiency, transparency, and aesthetics. These additional dimensions introduce unique challenges on device architecture. This article reports the development of wide-bandgap, inorganic-based TPV devices integrating ultrathin hydrogenated amorphous silicon (a-Si:H) as a transparent absorber, with carrier selective contacts and transparent electrodes. The article analyzes how absorber thickness influences the electrical, optical, and aesthetic performance of devices, evaluating key parameters in TPV such as light utilization efficiency (LUE), average photopic transmittance (APT), color rendering index (CRI), and electrical properties such as power conversion efficiency (PCE). The device structure is SLG/FTO/AZO/a-SiCx(n)/a-Si:H/V2Ox/AZO. This approach results in PCE ranging from 1.7% with an APT of 60% to a PCE of 4.1% with an APT of 28%, yielding LUE values between 0.9% and 1.3%. Device characterization encompasses optical spectrophotometry, J–V measurements under standard test conditions, spectral response analysis, and variable illumination measurements (VIM). Additionally, color characterization is conducted using CIE 1931 color space maps to determine the chromaticity coordinates, CRI, and the variation of color as a function of absorber thickness.

Abstract Image

探索超薄a-Si:H透明光伏器件的极限与效率、透明度和美学平衡
透明光伏(TPV)设备代表了光伏技术的一个有前途的进步,特别是在建筑集成光伏(BIPV)中。与传统光伏发电不同,TPV必须在效率、透明度和美观之间取得平衡。这些额外的维度给设备架构带来了独特的挑战。本文报道了将超薄氢化非晶硅(a- si:H)作为透明吸收剂,具有载流子选择性触点和透明电极的宽带隙无机基TPV器件的开发。本文分析了吸收体厚度如何影响器件的电学、光学和美学性能,评估了TPV中的关键参数,如光利用效率(LUE)、平均光透过率(APT)、显色指数(CRI)和电学性能,如功率转换效率(PCE)。器件结构为SLG/FTO/AZO/a-SiCx(n)/a-Si:H/ vox /AZO。这种方法的结果是,PCE为1.7%,APT为60%,PCE为4.1%,APT为28%,LUE值在0.9%至1.3%之间。器件特性包括光学分光光度法、标准测试条件下的J-V测量、光谱响应分析和可变照度测量(VIM)。此外,使用CIE 1931颜色空间图进行颜色表征,以确定色度坐标、CRI和颜色变化作为吸收剂厚度的函数。
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来源期刊
Solar RRL
Solar RRL Physics and Astronomy-Atomic and Molecular Physics, and Optics
CiteScore
12.10
自引率
6.30%
发文量
460
期刊介绍: Solar RRL, formerly known as Rapid Research Letters, has evolved to embrace a broader and more encompassing format. We publish Research Articles and Reviews covering all facets of solar energy conversion. This includes, but is not limited to, photovoltaics and solar cells (both established and emerging systems), as well as the development, characterization, and optimization of materials and devices. Additionally, we cover topics such as photovoltaic modules and systems, their installation and deployment, photocatalysis, solar fuels, photothermal and photoelectrochemical solar energy conversion, energy distribution, grid issues, and other relevant aspects. Join us in exploring the latest advancements in solar energy conversion research.
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