CMOS Design of Ge-on-Si Single-Photon Avalanche Diode With Ultralow Noise and Jitter

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-20 DOI:10.1109/JSTQE.2025.3531878

Jau Yang Wu;Chi-En Chen;Chao-Hsin Wu;Gong-Ru Lin

{"title":"CMOS Design of Ge-on-Si Single-Photon Avalanche Diode With Ultralow Noise and Jitter","authors":"Jau Yang Wu;Chi-En Chen;Chao-Hsin Wu;Gong-Ru Lin","doi":"10.1109/JSTQE.2025.3531878","DOIUrl":null,"url":null,"abstract":"We have proposed a modified structure called the “charge focusing” design of a single-photon avalanche diode, based on our previous work using TSMC's 0.18 μm HV CMOS technology. We have demonstrated that this modified structure can improve the electric field distribution in the photon absorption layer, which previously resulted in worse jitter performance. This modification enhances carrier collection efficiency and detector timing resolution, leading to better performance in various applications where the pre-modified structure had been used. Furthermore, we propose that the modified structure can also be combined with the Separate Absorption and Charge Multiplication (SACM) structure to achieve high photon detection efficiency at infrared wavelengths, by adding a Germanium (Ge) epitaxy layer on top of the silicon layer. Our simulations show that the charge focusing design brings many advantages, most notably reducing the electric field at the edge of the Ge layer in the SACM structure, which is commonly used in silicon photonic and CMOS technologies.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-7"},"PeriodicalIF":4.3000,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10848215/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

We have proposed a modified structure called the “charge focusing” design of a single-photon avalanche diode, based on our previous work using TSMC's 0.18 μm HV CMOS technology. We have demonstrated that this modified structure can improve the electric field distribution in the photon absorption layer, which previously resulted in worse jitter performance. This modification enhances carrier collection efficiency and detector timing resolution, leading to better performance in various applications where the pre-modified structure had been used. Furthermore, we propose that the modified structure can also be combined with the Separate Absorption and Charge Multiplication (SACM) structure to achieve high photon detection efficiency at infrared wavelengths, by adding a Germanium (Ge) epitaxy layer on top of the silicon layer. Our simulations show that the charge focusing design brings many advantages, most notably reducing the electric field at the edge of the Ge layer in the SACM structure, which is commonly used in silicon photonic and CMOS technologies.

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具有超低噪声和抖动的硅基单光子雪崩二极管的 CMOS 设计

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.