Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-12-19 DOI:10.1016/j.jcrysgro.2024.128047

Mohamed Al Khalfioui, Minh Tuan Dau, Zineb Bouyid, Ileana Florea, Philippe Vennéguès, Julien Brault, Stéphane Vézian, Adrien Michon, Yvon Cordier, Philippe Boucaud

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引用次数: 0

Abstract

The growth of two-dimensional molybdenum disulphide (MoS₂) layers on Gallium Nitride/Sapphire (GaN/Al₂O₃) substrates using molecular beam epitaxy (MBE) growth technique has been investigated. We show that optimized conditions at a substrate temperature around 700 °C lead to full surface coverage of MoS₂ on GaN. The growth proceeds through the initial formation of triangular-shaped MoS₂ flakes/domains on the GaN surface. Raman spectroscopy and high-resolution scanning transmission electron microscopy reveal the formation at the wafer-scale of a MoS₂ monolayer and few bilayers. A closer analysis of regions with two MoS₂ layers reveals the coexistence of both 1 T and 1H phases, showing strong bonds between the top layer of GaN and the first MoS₂ layer, and van der Waals interactions between the first and second MoS₂ layers.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.