Thermodynamic analysis of phase and composition during the co-deposition of SiC-HfC films by chemical vapor deposition method

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-12-20 DOI:10.1016/j.jcrysgro.2024.128051

Pengjian Lu , Pu Liao , Chongjie Wang , Yan Xing , Chitengfei Zhang , Qingfang Xu , Rong Tu , Song Zhang

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引用次数: 0

Abstract

A thorough thermodynamic investigation of phase and composition in the SiCl₄-HfCl₄-C₃H₈-H₂ system is conducted during the co-deposition of SiC + HfC films by chemical vapor deposition method (CVD). The results indicate that medium temperature ranging from 1000 to1400 ^oC is more suitable for SiC deposition, while higher temperature (1400 ∼ 1800 °C) promotes HfC deposition. The co-deposition of pure SiC and HfC phases is observed when the C₃H₈/(SiCl₄ + HfCl₄) ratio is maintained between 0.15 and 0.3, along with an H₂/(SiCl₄ + HfCl₄) ratio exceeding 50. The excess carbon source leads to undesirable formation of graphite, whereas insufficient carburization may result in the formation of impurities such as Si or HfSi₂. An optimal increase the hydrogen ratio can suppress the formation of the graphite phase, but too much hydrogen may cause the decomposition of SiC, leading to additional impurities. Furthermore, a high-throughput calculation method was employed to generate the composition mapping, which allow for fine-tuned control of SiC-HfC film composition by adjusting temperature and the SiCl₄:HfCl₄ ratio.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.