Facet growth kinetics and diameter fluctuations in molten zone Si crystal growth

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-12-11 DOI:10.1016/j.jcrysgro.2024.128024

Christian Kranert , Paul Wimmer , Jochen Friedrich , Thierry Duffar

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引用次数: 0

Abstract

Several <111> oriented silicon single crystals have been grown in ellipsoid mirror furnaces at various growth rates by the zone melting technique. The crystals grown with initial necking show no dislocation and large (111) facets perpendicular to the growth axis. Measurements of facet growth rate and undercooling allowed selecting the applicable kinetic coefficients in case of facets growing through 2D-seed nucleation mode. Crystals grown without necking exhibit dislocations and show smaller stable facets, allowing the determination of the kinetic coefficient in case of dislocation-driven facet growth. Among these crystals, those grown at lower velocity, with a lower temperature gradient, show a decrease of dislocation density with length of the crystal and an increase of facet diameter fluctuations. A geometric model of dislocation-facet interaction suggests that these diameter fluctuations are due to the effect of individual dislocations crossing the facet, which increase when the dislocation density decreases.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.