Broadband InGaAsP/InP NIR LEDs based on multiple photon-recycling photoluminescent layers

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-12-12 DOI:10.1016/j.jcrysgro.2024.128045

Zoltán Szabó, Barbara Beiler, Zsófia Baji

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引用次数: 0

Abstract

Infrared spectroscopy is a very popular measurement technique presently, especially in healthcare, agriculture, and food industry. NIR LEDs have high efficiencies, but narrow wavelengths, therefore they are suitable for measurements at a certain wavelength. GaInAsP/InP is an ideal material system for the fabrication of double heterostructure LED devices with tuneable emission wavelengths. The present study addresses the need when a broader emission-peak is preferred for spectroscopic applications. An LED structure is covered by photoluminescent layers grown epitaxially by liquid phase epitaxy. The primary light of the active layer excites the further layers which emit photoluminescent radiation. The partly transmitted primary and the secondary lights together result in a broader spectrum. This work presents NIR LEDs with wide emission spectra which cover the entire NIR range based on multiple photon-recycling photoluminescent layers. This type of NIR light source could replace the incandescent light sources on account of their small dimensions, high efficiency, and low power consumption, which is critical in small, handheld NIR spectroscopy devices.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.