Enhancing thermoelectric properties of ScN films through twin domains

IF 7.5 Q1 CHEMISTRY, PHYSICAL
J. More-Chevalier , U.D. Wdowik , J. Martan , T. Baba , S. Cichoň , P. Levinský , D. Legut , E. de Prado , P. Hruška , J. Pokorný , J. Bulíř , C. Beltrami , T. Mori , M. Novotný , I. Gregora , L. Fekete , L. Volfová , J. Lančok
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Abstract

Tailoring thermoelectric properties of ScN-based materials is of vital importance for their application, particularly at high operating temperatures. Here, we report on the thermoelectric properties of the ScN layers deposited on MgO (001) substrates by the DC reactive magnetron sputtering. The microstructure of the produced thin films is examined by X-ray diffraction and atomic force microscopy, while their chemical composition and contamination by defects are determined by X-ray photoelectron spectroscopy. The effect of temperature on the phonon properties of ScN layers, having implications for their thermoelectric properties, is explored by Raman spectroscopy. The results of our experiments are confronted with those following from the first-principles studies. We find that the ScN/MgO(001) layers with twin-domain structure reveal enhanced thermoelectric properties at elevated temperature as compared to those measured for almost defect- and domain-free layers, namely, enlarged Seebeck coefficient by about 30% and over two and a half times increased figure of merit at 800 K. Therefore, structural twin domains in thin ScN film appear to be a simple and rather stable solution for the improvement of its thermoelectric properties at elevated temperatures.

Abstract Image

通过双畴增强ScN薄膜的热电性能
定制scn基材料的热电性能对其应用至关重要,特别是在高温下的应用。在这里,我们报道了用直流反应磁控溅射沉积在MgO(001)衬底上的ScN层的热电性能。用x射线衍射和原子力显微镜对薄膜的微观结构进行了研究,并用x射线光电子能谱法对薄膜的化学成分和缺陷污染进行了测定。温度对ScN层声子性质的影响,对其热电性质的影响,探讨了拉曼光谱。我们的实验结果与第一性原理研究的结果相矛盾。我们发现,与几乎没有缺陷和无畴的ScN/MgO(001)层相比,具有双畴结构的ScN/MgO(001)层在高温下显示出增强的热电性能,即在800 K时,塞贝克系数增加了约30%,优点系数增加了2.5倍以上。因此,结构双畴在ScN薄膜中似乎是一种简单而稳定的解决方案,可以改善其高温下的热电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
8.10
自引率
1.60%
发文量
128
审稿时长
66 days
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