Titanium dioxide (TiO2) as a potential material in memristor for gamma (γ) ray detection

IF 3.8 Q2 CHEMISTRY, PHYSICAL

Chemical Physics Impact Pub Date : 2024-11-15 DOI:10.1016/j.chphi.2024.100781

Margi Solanki , Usha Parihar , Kinjal Patel , Vishva Jain , Shyam Sunder Sharma , Jaymin Ray

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Abstract

In the field of Resistive Random Access Memory (RRAM), memory computing at low voltage operating condition is the requirement of best switching circuits. They should be a part of non-volatile system, too. Apart from these, RRAM is also providing big platform of sensing applications. In that case, Memristor is a keystone of RRAM, which can remembers the amount of charge that has previously flowed through it. That is why memristor is being chosen to take responsibility of sensing. By a little change in memristor we can make it to almost real time radiation detector. Here memristor is particularly design for gamma rays sensing. Basically memristor act like a sensing switch in RRAM. Memristor is prepared using sandwich structure of silver (Ag)/Metal Oxide/Copper (Cu). This has a micro-thick layer of Metal Oxide, and metal strips form of Ag and Cu. To achieve micro-thick layer of Metal Oxide using sol-gel processed drop casting method is used. However, many more techniques are there for the preparation of device quality film. The presented review aims to understand the detection mechanisc of gamma (γ) rays with accuracy and creating stable memristor based on TiO₂ as a metal oxide sensing element. Further, the influence of thickness, of TiO₂ Metal Oxide, on sensing will be elaborated.

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