Surface recombination in organic solar cells: Intrinsic vs. doped active layer

IF 2.7 4区 工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Gulnur Akhtanova , Hryhorii P. Parkhomenko , Joachim Vollbrecht , Andrii I. Mostovyi , Nora Schopp , Viktor Brus
{"title":"Surface recombination in organic solar cells: Intrinsic vs. doped active layer","authors":"Gulnur Akhtanova ,&nbsp;Hryhorii P. Parkhomenko ,&nbsp;Joachim Vollbrecht ,&nbsp;Andrii I. Mostovyi ,&nbsp;Nora Schopp ,&nbsp;Viktor Brus","doi":"10.1016/j.orgel.2024.107183","DOIUrl":null,"url":null,"abstract":"<div><div>This study extends the analytical model of surface recombination in organic solar cells with an intrinsic active bulk-heterojunction layer. The key finding of the developed multi-mechanism recombination model accounting for the intrinsic active layer is that the slope of <em>V</em><sub><em>OC</em></sub> vs. ln(Light Intensity) cannot be lower than 1.0 kT<em>/q</em> even at the extremely high concentrations of surface traps. We revealed the difference in recombination-related parameters determined in the scope of the multi-mechanism recombination model for the doped or intrinsic active layer and highlighted the importance of identifying the doping level of the active layer material. This is demonstrated by a synergy of comprehensive simulation and experimental analysis of organic solar cells with donor: acceptor blends: (PM6:Y6, PTB7-Th:COTIC-4F, PTB7-Th:O-IDTBR and PTB7-Th:ITIC-4F).</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"137 ","pages":"Article 107183"},"PeriodicalIF":2.7000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1566119924001940","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

This study extends the analytical model of surface recombination in organic solar cells with an intrinsic active bulk-heterojunction layer. The key finding of the developed multi-mechanism recombination model accounting for the intrinsic active layer is that the slope of VOC vs. ln(Light Intensity) cannot be lower than 1.0 kT/q even at the extremely high concentrations of surface traps. We revealed the difference in recombination-related parameters determined in the scope of the multi-mechanism recombination model for the doped or intrinsic active layer and highlighted the importance of identifying the doping level of the active layer material. This is demonstrated by a synergy of comprehensive simulation and experimental analysis of organic solar cells with donor: acceptor blends: (PM6:Y6, PTB7-Th:COTIC-4F, PTB7-Th:O-IDTBR and PTB7-Th:ITIC-4F).

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来源期刊
Organic Electronics
Organic Electronics 工程技术-材料科学:综合
CiteScore
6.60
自引率
6.20%
发文量
238
审稿时长
44 days
期刊介绍: Organic Electronics is a journal whose primary interdisciplinary focus is on materials and phenomena related to organic devices such as light emitting diodes, thin film transistors, photovoltaic cells, sensors, memories, etc. Papers suitable for publication in this journal cover such topics as photoconductive and electronic properties of organic materials, thin film structures and characterization in the context of organic devices, charge and exciton transport, organic electronic and optoelectronic devices.
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