Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations

IF 5.1 2区工程技术 Q1 ENGINEERING, MULTIDISCIPLINARY

Engineering Science and Technology-An International Journal-Jestech Pub Date : 2025-02-01 DOI:10.1016/j.jestch.2025.101975

Ahmed Ali Alarabi , Osman Çiçek , Hasan Makara , Fatih Ünal , Merve Zurnacı , Şemsettin Altındal

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Abstract

This paper focuses on the ultraviolet–visible (UV–vis) light response of the p-n and p-i-n vertical self-powered photodiodes (PDs) based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO₂/n-Si Heterojunctions. The PDs, referred to as Device A-B-C-D-E and F according to the modified structures, were produced to increase the sensing capacity using distinct anode contacts. The basic fundamental parameters were recorded using the I-V data of PDs with thermionic emission theory (TE) and Ohm’s law. The results showed that, in line with the literature, the potential barrier height (Ф_Bo) decreased, and the ideality factor (n) increased with increasing illumination intensity. Additionally, the voltage-dependent series resistances (R_s) of PDs in the dark and under different UV–vis light intensities were determined using Ohm’s laws. It was recorded that R_s decreased as light intensity increased. On the other hand, the photosensitivity properties of PDs in UV–vis intensities depending on the voltage were investigated. The photosensitivity of the fabricated Device B reached a maximum of 4.05x10⁴ at short circuit voltage (V_sc = 0 V). In contrast, when self-powered, the short-circuit voltage (V_oc) showed better photosensitivity (with a minimum of 0.058). Additionally, the specific detectivity (D*) and the responsivity (R) of the PDs were calculated. According to the literature, the R and D* decreased with increasing power density at zero-bias voltage. Also, the R of Device B is higher, and D* is lower than other devices. The linear dynamic range (LDR) of Device A reaches ∼ 92 dB with maximum (V_bias = 0 V) while the dark current is 0.038 nA with minimum (in self-powered mode). Device B is considered suitable for the PDs (in self-powered mode) among other devices.

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利用独特的层和接触结构增强紫外可见p-n和p-i-n光电二极管的传感能力

本文主要研究了基于p-PMItz/n-Si、p-PMItz/n-4HSiC和p-PMItz/i-SiO2/n-Si异质结的p-n和p-i-n垂直自供电光电二极管（pd）的紫外-可见光响应。根据改进的结构，pd被称为器件A-B-C-D-E和F，通过使用不同的阳极触点来增加传感能力。利用热离子发射理论（TE）和欧姆定律记录了等离子体的I-V数据。结果表明，与文献一致，随着光照强度的增加，势垒高度（ФBo）减小，理想因子(n)增大。此外，利用欧姆定律确定了pd在黑暗和不同紫外-可见光强度下的电压相关串联电阻（Rs）。记录到Rs随光强的增加而降低。另一方面，研究了PDs在紫外可见强度下随电压变化的光敏性能。制备的器件B在短路电压（Vsc = 0 V）下的光敏性最高可达4.05x104，而自供电时，短路电压（Voc）表现出更好的光敏性（最低为0.058）。此外，还计算了pd的比检出率（D*）和响应率(R)。根据文献，在零偏置电压下，R和D*随功率密度的增加而减小。设备B的R比其他设备高，D*比其他设备低。器件A的线性动态范围（LDR）最大可达~ 92 dB (Vbias = 0 V)，而暗电流最小为0.038 nA（自供电模式）。在其他设备中，设备B被认为适合pd（处于自供电模式）。

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来源期刊

Engineering Science and Technology-An International Journal-Jestech Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

11.20

自引率

3.50%

发文量

153

审稿时长

22 days

期刊介绍： Engineering Science and Technology, an International Journal (JESTECH) (formerly Technology), a peer-reviewed quarterly engineering journal, publishes both theoretical and experimental high quality papers of permanent interest, not previously published in journals, in the field of engineering and applied science which aims to promote the theory and practice of technology and engineering. In addition to peer-reviewed original research papers, the Editorial Board welcomes original research reports, state-of-the-art reviews and communications in the broadly defined field of engineering science and technology. The scope of JESTECH includes a wide spectrum of subjects including: -Electrical/Electronics and Computer Engineering (Biomedical Engineering and Instrumentation; Coding, Cryptography, and Information Protection; Communications, Networks, Mobile Computing and Distributed Systems; Compilers and Operating Systems; Computer Architecture, Parallel Processing, and Dependability; Computer Vision and Robotics; Control Theory; Electromagnetic Waves, Microwave Techniques and Antennas; Embedded Systems; Integrated Circuits, VLSI Design, Testing, and CAD; Microelectromechanical Systems; Microelectronics, and Electronic Devices and Circuits; Power, Energy and Energy Conversion Systems; Signal, Image, and Speech Processing) -Mechanical and Civil Engineering (Automotive Technologies; Biomechanics; Construction Materials; Design and Manufacturing; Dynamics and Control; Energy Generation, Utilization, Conversion, and Storage; Fluid Mechanics and Hydraulics; Heat and Mass Transfer; Micro-Nano Sciences; Renewable and Sustainable Energy Technologies; Robotics and Mechatronics; Solid Mechanics and Structure; Thermal Sciences) -Metallurgical and Materials Engineering (Advanced Materials Science; Biomaterials; Ceramic and Inorgnanic Materials; Electronic-Magnetic Materials; Energy and Environment; Materials Characterizastion; Metallurgy; Polymers and Nanocomposites)