Improved resistive switching characteristics of Au/TiO2/Au memristors on PDMS substrates with pyramid arrays

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-01-13 DOI:10.1016/j.mseb.2025.117986

Jaejun Lee , Kibum Song , Keun-Young Shin, Woongkyu Lee

{"title":"Improved resistive switching characteristics of Au/TiO2/Au memristors on PDMS substrates with pyramid arrays","authors":"Jaejun Lee , Kibum Song , Keun-Young Shin, Woongkyu Lee","doi":"10.1016/j.mseb.2025.117986","DOIUrl":null,"url":null,"abstract":"<div><div>Memristors hold significant importance for future data storage and neuromorphic computing devices. However, complementary metal oxide semiconductor-compatible memristors on Si substrates suffer from harsh non-uniform resistance switching behavior due to the random ion movement that results in defect formation. To improve the uniformity of conducting filament formation/destruction through uniform ion movements, a memristor device on a pyramid-structured polydimethylsiloxane (PDMS) substrate was fabricated to induce electric field concentration at the top of the structure. The pyramid-structured PDMS not only serves as an electric field concentrator but also has lower crack density, enhancing the adhesion of memristor devices to the substrate. While memristors fabricated on the flat PDMS substrate showed no resistance switching, the pyramid-structured device was confirmed to operate for more than 1,000 resistive switching cycles, with set and reset voltages of 3.15 V ± 0.36 V and −1.44 V ± 0.35 V, respectively, and an on/off ratio exceeding 10<sup>6</sup>.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"314 ","pages":"Article 117986"},"PeriodicalIF":3.9000,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725000091","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Memristors hold significant importance for future data storage and neuromorphic computing devices. However, complementary metal oxide semiconductor-compatible memristors on Si substrates suffer from harsh non-uniform resistance switching behavior due to the random ion movement that results in defect formation. To improve the uniformity of conducting filament formation/destruction through uniform ion movements, a memristor device on a pyramid-structured polydimethylsiloxane (PDMS) substrate was fabricated to induce electric field concentration at the top of the structure. The pyramid-structured PDMS not only serves as an electric field concentrator but also has lower crack density, enhancing the adhesion of memristor devices to the substrate. While memristors fabricated on the flat PDMS substrate showed no resistance switching, the pyramid-structured device was confirmed to operate for more than 1,000 resistive switching cycles, with set and reset voltages of 3.15 V ± 0.36 V and −1.44 V ± 0.35 V, respectively, and an on/off ratio exceeding 10⁶.

Abstract Image

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.