Luminescence characterisation of composite quantum confinement structures of In0.29Ga0.71As well-cluster composite

IF 2.5 3区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Photonics and Nanostructures-Fundamentals and Applications Pub Date : 2025-02-01 DOI:10.1016/j.photonics.2025.101354

Zhensheng Wang , Yan Li , Haizhu Wang , Dengkui Wang , Jiao Wang , Minghui Lv , Lulu Gan , Shucun Zhao

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Abstract

In this paper, the InGaAs/GaAsP multiple quantum wells (MQWs) were successfully fabricated using metal-organic chemical vapor deposition (MOCVD) equipment, exhibiting the characteristics of a well-cluster composite (WCC) quantum structure. X-ray diffraction (XRD) tests indicated that the crystalline quality of the MQWs was high. Furthermore, photoluminescence (PL) tests revealed that the highly strained InGaAs/GaAsP quantum well structures could emit lasers simultaneously in the 950 nm and 1030 nm bands. This observation demonstrated that the double peaks observed in the quantum well photoluminescence were associated with indium-rich clusters (IRCs) generated by In-atom polarization, highlighting significant advantages for the development of new dual-wavelength lasers. This finding holds considerable importance for the advancement of novel monolithic quantum confined lasers that provide outputs in dual-wavelength and dual-polarization formats.

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来源期刊

Photonics and Nanostructures-Fundamentals and Applications 工程技术-材料科学：综合

CiteScore

5.00

自引率

3.70%

发文量

审稿时长

62 days

期刊介绍： This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.