Jinyan Chang , Liu Yang , Gongwei Hu , Shuaiwei Fan
{"title":"Hybrid functionals evaluate the n-type defects in Nb, Mo and Pt doped α-Ga2O3","authors":"Jinyan Chang , Liu Yang , Gongwei Hu , Shuaiwei Fan","doi":"10.1016/j.mseb.2025.118033","DOIUrl":null,"url":null,"abstract":"<div><div>Based on the hybrid functionals calculations, the efficiency of the <em>n</em>-type defects Nb, Mo and Pt substituting Ga (labeled as <em>Nb<sub>Ga</sub></em>, <em>Mo<sub>Ga</sub></em> and <em>Pt<sub>Ga</sub></em>) in α-Ga<sub>2</sub>O<sub>3</sub> are fully evaluated. Obtained phonon dispersions imply the <em>α</em>-Ga<sub>2</sub>O<sub>3</sub> containing <em>Nb<sub>Ga</sub></em>, <em>Mo<sub>Ga</sub></em> and <em>Pt<sub>Ga</sub></em> defects keep the thermodynamic stability. The <em>Nb<sub>Ga</sub></em>, <em>Mo<sub>Ga</sub></em> and <em>Pt<sub>Ga</sub></em> are typical n-type defects. The transition energy levels ε(0/+) show defects <em>Nb<sub>Ga</sub></em>, <em>Mo<sub>Ga</sub></em> and <em>Pt<sub>Ga</sub></em> in <em>α</em>-Ga<sub>2</sub>O<sub>3</sub> could be fully ionized. With the thermodynamic equilibrium fabrication scheme, we find NbO, MoO<sub>3</sub> and PtO<sub>2</sub> are the optimal dopants sources, and the minimum formation energies for defects <em>Nb<sub>Ga</sub></em>, <em>Mo<sub>Ga</sub></em> and <em>Pt<sub>Ga</sub></em> are −0.66 eV, 2.56 eV and 3.21 eV. Meanwhile, <em>Mo<sub>Ga</sub></em> (<em>Pt<sub>Ga</sub></em>) with intrinsic defect <em>V<sub>O</sub></em> is highly susceptible to form defect complex <em>V<sub>O</sub></em> + <em>Mo<sub>Ga</sub></em> (<em>V<sub>O</sub></em> + <em>Pt<sub>Ga</sub></em>). These findings would provide significant insights to the n-type defects in α-Ga<sub>2</sub>O<sub>3</sub>.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"314 ","pages":"Article 118033"},"PeriodicalIF":3.9000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092151072500056X","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Based on the hybrid functionals calculations, the efficiency of the n-type defects Nb, Mo and Pt substituting Ga (labeled as NbGa, MoGa and PtGa) in α-Ga2O3 are fully evaluated. Obtained phonon dispersions imply the α-Ga2O3 containing NbGa, MoGa and PtGa defects keep the thermodynamic stability. The NbGa, MoGa and PtGa are typical n-type defects. The transition energy levels ε(0/+) show defects NbGa, MoGa and PtGa in α-Ga2O3 could be fully ionized. With the thermodynamic equilibrium fabrication scheme, we find NbO, MoO3 and PtO2 are the optimal dopants sources, and the minimum formation energies for defects NbGa, MoGa and PtGa are −0.66 eV, 2.56 eV and 3.21 eV. Meanwhile, MoGa (PtGa) with intrinsic defect VO is highly susceptible to form defect complex VO + MoGa (VO + PtGa). These findings would provide significant insights to the n-type defects in α-Ga2O3.
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