Hybrid functionals evaluate the n-type defects in Nb, Mo and Pt doped α-Ga2O3

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jinyan Chang , Liu Yang , Gongwei Hu , Shuaiwei Fan
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引用次数: 0

Abstract

Based on the hybrid functionals calculations, the efficiency of the n-type defects Nb, Mo and Pt substituting Ga (labeled as NbGa, MoGa and PtGa) in α-Ga2O3 are fully evaluated. Obtained phonon dispersions imply the α-Ga2O3 containing NbGa, MoGa and PtGa defects keep the thermodynamic stability. The NbGa, MoGa and PtGa are typical n-type defects. The transition energy levels ε(0/+) show defects NbGa, MoGa and PtGa in α-Ga2O3 could be fully ionized. With the thermodynamic equilibrium fabrication scheme, we find NbO, MoO3 and PtO2 are the optimal dopants sources, and the minimum formation energies for defects NbGa, MoGa and PtGa are −0.66 eV, 2.56 eV and 3.21 eV. Meanwhile, MoGa (PtGa) with intrinsic defect VO is highly susceptible to form defect complex VO + MoGa (VO + PtGa). These findings would provide significant insights to the n-type defects in α-Ga2O3.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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