{"title":"A novel dual-band power amplifier with integrated harmonic control based on dual transmission lines","authors":"Jindong Zhang, Cuiping Yu, Hao Li, Yuanan Liu","doi":"10.1016/j.mejo.2025.106552","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, a novel and effective design method for dual-band matching is proposed based on a dual transmission line structure. Compared to conventional design methods, in which the fundamental matching network as well as the harmonic control network are designed separately, the proposed method integrates the harmonic control network into the fundamental matching network, thus simplifying the design and facilitating analytical calculations and accurate matching. For validation, a dual-band power amplifier (PA) is designed and fabricated by using CG2H40010F GaN HEMT. Measurements indicate that the designed PA can deliver saturated output power of 41.5 and 41.4 dBm at 2.6 and 3.5 GHz, respectively. The drain efficiency is 60.2 %–71.8 % at 2.43–2.79 GHz and 60.1 %–70.1 % at 3.40–3.57 GHz. Digital predistortion (DPD) testing was conducted using 20 MHz and 100 MHz 5G NR signals, achieving adjacent channel leakage ratios (ACLR) better than −48 dBc with DPD. Excellent linearity was demonstrated across both frequency bands.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"156 ","pages":"Article 106552"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000013","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a novel and effective design method for dual-band matching is proposed based on a dual transmission line structure. Compared to conventional design methods, in which the fundamental matching network as well as the harmonic control network are designed separately, the proposed method integrates the harmonic control network into the fundamental matching network, thus simplifying the design and facilitating analytical calculations and accurate matching. For validation, a dual-band power amplifier (PA) is designed and fabricated by using CG2H40010F GaN HEMT. Measurements indicate that the designed PA can deliver saturated output power of 41.5 and 41.4 dBm at 2.6 and 3.5 GHz, respectively. The drain efficiency is 60.2 %–71.8 % at 2.43–2.79 GHz and 60.1 %–70.1 % at 3.40–3.57 GHz. Digital predistortion (DPD) testing was conducted using 20 MHz and 100 MHz 5G NR signals, achieving adjacent channel leakage ratios (ACLR) better than −48 dBc with DPD. Excellent linearity was demonstrated across both frequency bands.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.