A cross-scale investigation on transient electrothermal performance for power MOSFETs at device-package level

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-02-01 DOI:10.1016/j.mejo.2025.106561

Yuxuan Dai , Jiafei Yao , Jing Chen , Maolin Zhang , Yucheng Xu , Qing Yao , Qingyou Qian , Jun Zhang , Kemeng Yang , Yufeng Guo

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引用次数: 0

Abstract

This article proposes a fully automated cross-scale relaxation scheme for analyzing the temporal electrothermal behavior of power MOSFETs, spanning from the complete micrometer-scale devices to the millimeter-scale packages. The presented scheme integrates the device-level technology computer-aided design (TCAD) simulator Silvaco with the package-level finite element analysis (FEA) simulator ANSYS Icepak, achieving self-consistent electrothermal effects. It reduces data transfer time between the simulators while harnessing their complementary strengths to address complex device structures, package structures, and heat flow environments. Simulation results are then compared with alternative methods, and their distinct features are analyzed in detail. Furthermore, empirical models are derived to characterize electrothermal parameters and extract the thermal time constant. The method's effectiveness is validated using a commercial power MOSFET with TO-220F packaging. The simulations, models, and experiments produced highly satisfactory fits, enabling an effective way for device-package-level co-design and rapid determination of thermal time constant.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.