A small area-occupation three-stage OTA with transistor resistance and parasitic capacitance Q-factor modulation for miniaturized communication systems
IF 1.9 3区 工程技术Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yangtao Hu, Siwan Dong, Xiaoliang Ji, Zengwei Qi, Cheng Shan
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引用次数: 0
Abstract
A small area-occupation, three-stage operational transconductance amplifier (OTA) is proposed for miniaturized communication systems. Our work presents a novel RC impedance attenuation solution composed of transistor resistance and parasitic capacitance mainly modulating the Q-factor (TRPCQM) of complex poles and precisely handles the first zero and the second pole to enlarge unity-gain frequency (UGF). By employing source-drain transconductance equivalent resistance and inexpensive parasitic capacitance in our RC impedance attenuation block, the complex poles can be regulated meanwhile decreasing chip area occupation. Under a supply voltage of 1.2V, the proposed design is validated using a standard 0.18 μm CMOS process, occupying an ultra-small area of 0.00276 mm2. When driving an ultra-large load of over 20 nF, the design achieves a DC gain exceeding 110 dB and a unity-gain frequency (UGF) of more than 2.1 MHz, with a power consumption of only 10.46 μW.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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