Analytical modeling of cylindrical Silicon-on-Insulator Schottky Barrier MOSFET and impact of insulator pillar radius on analog/RF and linearity parameters for low power circuit application

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-02-01 DOI:10.1016/j.mejo.2024.106505

Jitender Kumar , Amit Saxena , S.S. Deswal , Aparna N. Mahajan , R.S. Gupta

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Abstract

In the current scenario of semiconductor technologies, the researchers are investigating the cylindrical Silicon-on-Insulator Schottky Barrier (SOISB) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) due to its enhanced analog/RF parameters, high I_ON/I_OFF ratio and reduced ambipolarity. This study presents an analytical model for the cylindrical SOISB MOSFET, specifically focusing on how to calculate surface potential, threshold voltage, and drain current. Further, the research explores how altering the radius of the concentric SiO₂ insulator pillar impacts the MOSFETs performance in analog/RF circuit applications. The Silvaco 3D device simulator has been used for conducting the numerical simulations for a channel length of 22 nm and a silicon radius of 5 nm. The SiO₂ insulator pillar radius has been varied from 1 nm to 4 nm and its effect on the device characteristics has been investigated. The results show improved changes in analog/RF parameters and linearity, providing valuable insights for advanced semiconductor technologies.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.