Evaluation of space radiation effects on FinFET oxide layer with Geant4 simulation

Abstract

This study examines the radiation effects on FinFET devices in various space orbits utilizing Geant4 simulations. The impact of incident particles is assessed through the calculation of deposited energy in the oxide layer. By aggregating the radiation-induced energy deposition across all compositional elements, this research evaluates the effects of nine distinct orbital environments with varying incident energies and angles. The Geant4-derived energy deposition spectrum, combined with the orbital radiation model, facilitates a quantitative comparison of radiation effects on FinFET devices. The study ranks the orbits and their elements, identifying the most sensitive incident direction based on deposited energy. This quantitative evaluation method presents a novel approach for assessing space radiation effects on microelectronic devices with element-specific resolution.