Optimized design of UTB SOI MOSFET and connections for 2.45 G weak energy density harvesting

Abstract

This paper presents and optimizes for the first time the design of UTB SOI MOSFET and its connection method for 2.45 GHz weak energy density harvesting, and optimizes the device structure parameters by Sentaurus TCAD software, so that the device exhibits the desired characteristics of high forward bias current and low reverse leakage current. The new connection method utilizes the device's back bias regulated threshold voltage to enable the device's dual gates to simultaneously control the channel current, resulting in a highly efficient RF-DC rectifier at a modest energy density of 2.45 GHz.The Sentaurus Mixmode circuit mixing simulation module shows that in a half-wave rectifier circuit with loads of 0.1 pF and 20 kΩ, the single-tube energy conversion efficiencies of the new device reach 9.95 % and 19.27 % at input energies of −16 and −10 dBm, respectively, which are 2.73 and 2.48 times that of a silicon-based MOSFET under the same conditions.