A novel Ω-SOI Gate-All-Around FET with doping free load-Si and two-step wet etching achieving superior leakage suppression and short-channel effects immunity

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-02-01 DOI:10.1016/j.mejo.2024.106534

Longyu Sun , Haoyan Liu , Xin Wang , Xiaofeng Jia , Jiayi Zhang , Yongliang Li

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引用次数: 0

Abstract

In this article, we proposed a novel 4-layer silicon-on-insulator (SOI) nanosheet (NS) Gate-All-Around (GAA) field-effect transistor (FET) with an Ω-structure (Ω-SOI). Through high-quality SiGe/Si multilayers epitaxy on the ground-plane (GP) doping free load-Si, and a two-step wet etching Ω-structure formation process, this novel Ω-SOI GAAFET was successfully fabricated, achieving threshold swing (SS), off-state current (I_off), current ratio (I_on/I_off), and drain-induced barrier lowering (DIBL) values of 65 mV/dec, 2.8 × 10⁻⁴ μA/μm, 3 × 10⁶, and 7 mV/V, respectively. Moreover, 3D technology computer-aided design (TCAD) simulation was applied in advanced node, confirming that this novel Ω-SOI GAAFET can provide enhanced gate control capability than conventional SOI (C-SOI) GAAFET, leading to superior leakage suppression, and short-channel effects (SCE) immunity. This novel Ω-SOI GAAFET is compatible with the process flow of mainstream GAAFET, providing a promising candidate for extending CMOS technology.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.