A dynamic comparator exploiting floating inverter preamplifier with stacked cross coupled feedback inverter for 16-bit 1 MS/s SAR ADC

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhenyu Zhu, Yuzhou Xiong, Yanbo Zhang, Zhangming Zhu
{"title":"A dynamic comparator exploiting floating inverter preamplifier with stacked cross coupled feedback inverter for 16-bit 1 MS/s SAR ADC","authors":"Zhenyu Zhu,&nbsp;Yuzhou Xiong,&nbsp;Yanbo Zhang,&nbsp;Zhangming Zhu","doi":"10.1016/j.mejo.2024.106551","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a dynamic comparator based on floating inverter preamplifier (FIA) designed for high-resolution SAR ADCs. The comparator incorporates a floating inverter preamplifier with stacked cross-coupled feedback inverters and a latch. Load transistors are also added to the input transistors, enhancing small-signal gain and accelerating the initial integration speed of the FIA. The preamplifier achieves a higher gain, effectively suppressing input referred noise and accelerating the latch's regeneration process. Simulations performed using 180 nm CMOS technology with a 1.2 V supply demonstrate a significant gain increase, with only a minimal decrease in common-mode voltage, compared to state-of-the-art architectures. The simulation results indicate a pre-amplification stage gain of 52.9 dB, noise limited to 24 μV in tt corner, and energy consumption of 0.36 pJ per comparison, meeting the stringent requirements of a 16-bit SAR ADC. To validate its performance, the proposed comparator was implemented in a 16-bit 1 MS/s SAR ADC. Under transient noise conditions in post simulation, FFT results reveal a Signal-to-Noise and Distortion Ratio (SNDR) of 91.003 dB, confirming the comparator's enhanced capability to suppress input referred noise.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"156 ","pages":"Article 106551"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124002558","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents a dynamic comparator based on floating inverter preamplifier (FIA) designed for high-resolution SAR ADCs. The comparator incorporates a floating inverter preamplifier with stacked cross-coupled feedback inverters and a latch. Load transistors are also added to the input transistors, enhancing small-signal gain and accelerating the initial integration speed of the FIA. The preamplifier achieves a higher gain, effectively suppressing input referred noise and accelerating the latch's regeneration process. Simulations performed using 180 nm CMOS technology with a 1.2 V supply demonstrate a significant gain increase, with only a minimal decrease in common-mode voltage, compared to state-of-the-art architectures. The simulation results indicate a pre-amplification stage gain of 52.9 dB, noise limited to 24 μV in tt corner, and energy consumption of 0.36 pJ per comparison, meeting the stringent requirements of a 16-bit SAR ADC. To validate its performance, the proposed comparator was implemented in a 16-bit 1 MS/s SAR ADC. Under transient noise conditions in post simulation, FFT results reveal a Signal-to-Noise and Distortion Ratio (SNDR) of 91.003 dB, confirming the comparator's enhanced capability to suppress input referred noise.
求助全文
约1分钟内获得全文 求助全文
来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信