A 4.5-MS/s 12-bit Vcm self-generated SAR ADC in 130-nm CMOS

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-02-01 DOI:10.1016/j.mejo.2024.106548

Dun Yan , Xin Zhang , Yu Xiao , Xiaoyou Yu , Shaoliang Peng , Songting Li , Kai Tang , Jie Liu

{"title":"A 4.5-MS/s 12-bit Vcm self-generated SAR ADC in 130-nm CMOS","authors":"Dun Yan , Xin Zhang , Yu Xiao , Xiaoyou Yu , Shaoliang Peng , Songting Li , Kai Tang , Jie Liu","doi":"10.1016/j.mejo.2024.106548","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a 12-bit, 4.5 MS/s synchronous SAR ADC implemented in SMIC's 130-nm CMOS technology. It features a novel method for internal common-mode (Vcm) generation via introduces switched-capacitor technique, eliminating the need for external Vcm generation circuitry and reducing parasitics. To enhance capacitor matching and mitigate mismatch, thermometer encoding is employed for the most significant 6-bit of the ADC. The comparator boasts a dynamic pre-amplifier with switching capacitance tail current for improved signal amplification. The ADC exhibits excellent linearity with DNL of +0.59/−0.57 LSB and INL of +1.02/−1.12 LSB. Occupying a core area of 0.144 mm2, it achieves SNDR of 69.63 dB, ENOB of 11.27-bit, SFDR of 78.17 dB, and THD of −76.33 dB. Operating at 3.3 V, it consumes 2.577 mW with FoMW of 231.9 fJ/conversion-step. These measurement results confirm the feasibility and effectiveness of the proposed Vcm self-generation approach, offering fresh insights into Vcm generation in ADC design, with potential implications for future ADC architectures.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"156 ","pages":"Article 106548"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124002522","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This paper presents a 12-bit, 4.5 MS/s synchronous SAR ADC implemented in SMIC's 130-nm CMOS technology. It features a novel method for internal common-mode (V_cm) generation via introduces switched-capacitor technique, eliminating the need for external V_cm generation circuitry and reducing parasitics. To enhance capacitor matching and mitigate mismatch, thermometer encoding is employed for the most significant 6-bit of the ADC. The comparator boasts a dynamic pre-amplifier with switching capacitance tail current for improved signal amplification. The ADC exhibits excellent linearity with DNL of +0.59/−0.57 LSB and INL of +1.02/−1.12 LSB. Occupying a core area of 0.144 mm², it achieves SNDR of 69.63 dB, ENOB of 11.27-bit, SFDR of 78.17 dB, and THD of −76.33 dB. Operating at 3.3 V, it consumes 2.577 mW with FoM_W of 231.9 fJ/conversion-step. These measurement results confirm the feasibility and effectiveness of the proposed V_cm self-generation approach, offering fresh insights into V_cm generation in ADC design, with potential implications for future ADC architectures.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.