Xueting Liu , Binghuang Duan , Haoxiang Xue , Ashan Ejaz , Tieshan Wang
{"title":"Study of changes in surface composition and morphology of GaAs irradiated with different energies protons","authors":"Xueting Liu , Binghuang Duan , Haoxiang Xue , Ashan Ejaz , Tieshan Wang","doi":"10.1016/j.nimb.2024.165609","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium arsenide (GaAs) is a direct bandgap semiconductor material known for its excellent radiation resistance. This study investigates the radiation effects on both intrinsic GaAs and n-type GaAs. The samples were irradiated with 100 keV and 2 MeV protons at fluence ranging from 6 × 10<sup>14</sup>p/cm<sup>2</sup> to 1 × 10<sup>16</sup>p/cm<sup>2</sup>. The chemical components and surface morphology were characterized by X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The XPS results show that proton irradiation changed the chemical composition of the GaAs surface. AFM analysis revealed that proton irradiation induced the formation of hillocks and craters on the GaAs surface, which further merged with increasing fluence. Notably, the surface damage resulting from 100 keV proton irradiation was more severe than that caused by 2 MeV protons. Compared to intrinsic GaAs, n-type GaAs exhibits worse radiation resistance of structural stability.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"560 ","pages":"Article 165609"},"PeriodicalIF":1.4000,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X24003793","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium arsenide (GaAs) is a direct bandgap semiconductor material known for its excellent radiation resistance. This study investigates the radiation effects on both intrinsic GaAs and n-type GaAs. The samples were irradiated with 100 keV and 2 MeV protons at fluence ranging from 6 × 1014p/cm2 to 1 × 1016p/cm2. The chemical components and surface morphology were characterized by X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The XPS results show that proton irradiation changed the chemical composition of the GaAs surface. AFM analysis revealed that proton irradiation induced the formation of hillocks and craters on the GaAs surface, which further merged with increasing fluence. Notably, the surface damage resulting from 100 keV proton irradiation was more severe than that caused by 2 MeV protons. Compared to intrinsic GaAs, n-type GaAs exhibits worse radiation resistance of structural stability.
期刊介绍:
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.